Inventor · disambiguated record
Kuei-Hung Shen
Also filed as: SHEN KUEI-HUNG
33 granted patents·13 pending applications·350 citations·filing 2002–2024
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD23IND TECH RES INST11SHEN KUEI-HUNG3WANG YUNG-HUNG2CHEN WEI-CHUAN1
Top patents by PatentIndex Score
46 records- 0198US10270025B2Semiconductor structure having magnetic tunneling junction (MTJ) layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·20 cites·20 claims
- 0298US10038137B2MRAM device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·50 cites·20 claims
- 0396US7254059B2Multilevel phase-change memory element and operating methodIND TECH RES INST·Filed 2005·Granted Aug 7, 2007·130 cites·23 claims
- 0495US10164169B2Memory device having a single bottom electrode layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·11 cites·20 claims
- 0594US9893120B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·9 cites·20 claims
- 0694US9231191B2Magnetic tunnel junction device and method of making sameIND TECH RES INST·Filed 2013·Granted Jan 5, 2016·33 cites·8 claims
- 0792US9842986B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 12, 2017·8 cites·20 claims
- 0890US7583529B2Magnetic tunnel junction devices and magnetic random access memoryIND TECH RES INST·Filed 2007·Granted Sep 1, 2009·24 cites·19 claims
- 0990US2025048935A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1089US9172032B2Magnetic tunnel junction device with perpendicular magnetization and method of fabricating the sameIND TECH RES INST·Filed 2014·Granted Oct 27, 2015·7 cites·11 claims
- 1188US10304903B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·4 cites·20 claims
- 1285US10008538B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 26, 2018·4 cites·20 claims
- 1384US12133470B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·0 cites·20 claims
- 1484US10636961B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 28, 2020·3 cites·20 claims
- 1583US10686125B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·1 cites·20 claims
- 1682US10720571B2Magnetic memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 21, 2020·1 cites·20 claims
- 1781US11832529B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 1881US7606063B2Magnetic memory deviceIND TECH RES INST·Filed 2007·Granted Oct 20, 2009·16 cites·6 claims
- 1980US10665321B2Method for testing MRAM device and test apparatus thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 26, 2020·5 cites·20 claims
- 2075US10991758B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·1 cites·20 claims
- 2174US11316096B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 2273US8633555B2Magnetic sensorSHEN KUEI-HUNG·Filed 2012·Granted Jan 21, 2014·3 cites·20 claims
- 2372US11515473B2Semiconductor device including a magnetic tunneling junction (MTJ) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·0 cites·20 claims
- 2472US8130531B2Magnetic memory structure and operation methodTSAI CHING-HSIANG·Filed 2010·Granted Mar 6, 2012·5 cites·20 claims
- 2571US8467222B2Reader for magnetic shift registerSHEN KUEI-HUNG·Filed 2011·Granted Jun 18, 2013·5 cites·5 claims
- 2670US7843719B2Magnetic shift register and data accessing methodIND TECH RES INST·Filed 2009·Granted Nov 30, 2010·7 cites·16 claims
- 2761US2024268236A1Magnetic tunnel junction (mtj) having a diffusion blocking spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2861US2025336860A1Hybrid-bonding stack including a processor die and multi-cache-level memory dies and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2958US12250826B2Integrated circuit device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 11, 2025·0 cites·20 claims
- 3058US8957487B2Tunneling magneto-resistor reference unit and magnetic field sensing circuit using the sameWANG YUNG-HUNG·Filed 2012·Granted Feb 17, 2015·1 cites·10 claims
- 3157US9196379B2Magnetic shift register with pinning structureSHEN KUEI-HUNG·Filed 2011·Granted Nov 24, 2015·2 cites·12 claims
- 3256US11227893B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 18, 2022·0 cites·20 claims
- 3350US2014048895A1Magnetic Tunnel Junction DeviceIND TECH RES INST·Filed 2013·Application pending·0 cites
- 3449US2014001586A1Perpendicularly magnetized magnetic tunnel junction deviceIND TECH RES INST·Filed 2013·Application pending·0 cites
- 3548US2023240150A1Magnetic tunnel junction element and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3645US9166149B2Magnetic device with a substrate, a sensing block and a repair layerIND TECH RES INST·Filed 2014·Granted Oct 20, 2015·0 cites·14 claims
- 3743US8901687B2Magnetic device with a substrate, a sensing block and a repair layerIND TECH RES INST·Filed 2012·Granted Dec 2, 2014·0 cites·16 claims
- 3843US2007164383A1Magnetic random access memory with improved writing marginCHEN WEI-CHUAN·Filed 2006·Application pending·0 cites
- 3942US2013207209A1Top-pinned magnetic tunnel junction device with perpendicular magnetizationWANG YUNG-HUNG·Filed 2012·Application pending·0 cites
- 4040US2007172964A1Method of forming self-aligned contact via for magnetic random access memoryYEN CHENG-TYNG·Filed 2006·Application pending·0 cites
- 4139US2007166839A1Method for fabricating magnetoresistance multi-layerLAI CHIH-HUANG·Filed 2006·Application pending·0 cites
- 4238US10868234B2Storage device having magnetic tunnel junction cells of different sizes, and method of forming storage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 4338US2007249083A1Multilevel phase-change memory element and operating methodIND TECH RES INST·Filed 2007·Application pending·0 cites
- 4437US8164939B2Magnetic shift register memoryHUNG CHIEN-CHUNG·Filed 2010·Granted Apr 24, 2012·0 cites·21 claims
- 4532US2006077741A1Multilevel phase-change memory, manufacturing and status transferring method thereofWANG WEN-HAN·Filed 2005·Application pending·0 cites
- 4631US2003219963A1Self-aligned method for fabricating epitaxial base bipolar transistor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →