Inventor · disambiguated record
Kunal Shrotri
Also filed as: SHROTRI KUNAL · SHROTRI KUNAL BHASKAR
49 granted patents·7 pending applications·187 citations·filing 2012–2025
97Inventor score
Files withMICRON TECHNOLOGY INC48INTEL CORP3LODESTAR LICENSING GROUP LLC3SHROTRI KUNAL1SRIVASTAVA SHIVANI1
Top patents by PatentIndex Score
56 records- 0196US10388665B1Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stackMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 20, 2019·46 cites·22 claims
- 0296US10381377B2Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materialsMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 13, 2019·14 cites·14 claims
- 0396US10297611B1Transistors and arrays of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted May 21, 2019·14 cites·32 claims
- 0496US9893083B1Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materialsMICRON TECHNOLOGY INC·Filed 2016·Granted Feb 13, 2018·18 cites·20 claims
- 0595US11088017B2Stair step structures including insulative materials, and related devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 10, 2021·4 cites·17 claims
- 0695US10269625B1Methods of forming semiconductor structures having stair step structuresMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 23, 2019·39 cites·7 claims
- 0794US10014311B2Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysiliconMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 3, 2018·9 cites·15 claims
- 0894US9773805B1Integrated structures and methods of forming integrated structuresMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 26, 2017·10 cites·15 claims
- 0990US10559466B2Methods of forming a channel region of a transistor and methods used in forming a memory arrayMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 11, 2020·5 cites·6 claims
- 1089US10600682B2Semiconductor devices including a stair step structure, and related methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 24, 2020·6 cites·20 claims
- 1187US11411013B2Microelectronic devices including stair step structures, and related electronic devices and methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 9, 2022·2 cites·29 claims
- 1286US10483407B2Methods of forming si3nX, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 19, 2019·2 cites·28 claims
- 1385US10083984B2Integrated structures and methods of forming integrated structuresMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 25, 2018·3 cites·6 claims
- 1483US10096610B1Polysilicon doping controlled 3D NAND etchingINTEL CORP·Filed 2017·Granted Oct 9, 2018·5 cites·25 claims
- 1582US12279431B2Integrated assemblies and methods of forming integrated assembliesLODESTAR LICENSING GROUP LLC·Filed 2023·Granted Apr 15, 2025·0 cites·21 claims
- 1682US2025240962A1Integrated assemblies and methods of forming integrated assembliesLODESTAR LICENSING GROUP LLC·Filed 2025·Application pending·0 cites
- 1779US10157933B2Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorusMICRON TECHNOLOGY INC·Filed 2016·Granted Dec 18, 2018·2 cites·29 claims
- 1879US2024407161A1Methods of forming microelectronic devices including stair step structuresLODESTAR LICENSING GROUP LLC·Filed 2024·Application pending·0 cites
- 1977US11706924B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 18, 2023·0 cites·10 claims
- 2077US9153455B2Methods of forming semiconductor device structures, memory cells, and arraysMICRON TECHNOLOGY INC·Filed 2013·Granted Oct 6, 2015·2 cites·21 claims
- 2177US2025159944A1Methods of forming semiconductor devices having linersMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2276US10217755B2Flash memory cells, components, and methodsINTEL CORP·Filed 2017·Granted Feb 26, 2019·2 cites·23 claims
- 2375US12069856B2Methods of forming electronic devices using materials removable at different temperaturesMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 2475US11937429B2Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorusMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 19, 2024·0 cites·18 claims
- 2575US2022278214A1Semiconductor devices with liners and related methodsMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2675US2024099007A1Memory devices and related electronic systemsMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 2774US12063778B2Microelectronic devices including stair step structures, and related electronic devices and methodsMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 13, 2024·0 cites·15 claims
- 2873US11621270B2Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysiliconMICRON TECHNOLOGY INC·Filed 2021·Granted Apr 4, 2023·0 cites·9 claims
- 2972US11329064B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted May 10, 2022·0 cites·22 claims
- 3071US11805645B2Integrated assemblies having rugged material fill, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 31, 2023·1 cites·81 claims
- 3170US11600494B2Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 7, 2023·0 cites·21 claims
- 3270US11239252B2Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorusMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 1, 2022·0 cites·6 claims
- 3368US11751393B2Memory arrays and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Sep 5, 2023·0 cites·26 claims
- 3468US11037797B2Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 15, 2021·0 cites·27 claims
- 3568US10304749B2Method and apparatus for improved etch stop layer or hard mask layer of a memory deviceINTEL CORP·Filed 2017·Granted May 28, 2019·1 cites·13 claims
- 3667US11195854B2Integrated structures and methods of forming integrated structuresMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 7, 2021·0 cites·16 claims
- 3765US12041779B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 16, 2024·0 cites·18 claims
- 3865US11094705B2Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysiliconMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 17, 2021·0 cites·15 claims
- 3965US9064692B2DRAM cells and methods of forming silicon dioxideSRIVASTAVA SHIVANI·Filed 2012·Granted Jun 23, 2015·2 cites·10 claims
- 4064US11903196B2Microelectronic devices including tiered stacks including conductive structures isolated by slot structures, and related electronic systems and methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 13, 2024·0 cites·22 claims
- 4164US10615174B2Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materialsMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 7, 2020·0 cites·11 claims
- 4263US11476268B2Methods of forming electronic devices using materials removable at different temperaturesMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 18, 2022·0 cites·28 claims
- 4361US10665469B2Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted May 26, 2020·0 cites·26 claims
- 4461US10580792B2Integrated structures and methods of forming integrated structuresMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 3, 2020·0 cites·11 claims
- 4561US10381367B2Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysiliconMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 13, 2019·0 cites·15 claims
- 4660US11296103B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 5, 2022·0 cites·26 claims
- 4760US10971360B2Methods of forming a channel region of a transistor and methods used in forming a memory arrayMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 6, 2021·0 cites·7 claims
- 4860US10720446B2Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorusMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 21, 2020·0 cites·15 claims
- 4960US10121799B2Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materialsMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 6, 2018·0 cites·12 claims
- 5059US11205660B2Memory arrays and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 21, 2021·0 cites·26 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →