Inventor · disambiguated record

Kuo-Chi Tu

Also filed as: TU KUO-CHI

191 granted patents·34 pending applications·1,636 citations·filing 1999–2025

99Inventor score

Technology areasH10D H10W H01L H10P G11C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD137 TAIWAN SEMICONDUCTOR MFG69 TU KUO-CHI11 CHING KUO-CHENG3 TZENG KUO-CHYUAN2

Top patents by PatentIndex Score

225 records

0199US10008662B2Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 26, 2018·53 cites·18 claims
0299US9601545B1Series MIM structures compatible with RRAM processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·61 cites·20 claims
0399US9172036B2Top electrode blocking layer for RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 27, 2015·29 cites·20 claims
0498US11437084B2Embedded ferroelectric memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 6, 2022·5 cites·20 claims
0598US10930333B2Embedded ferroelectric memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·20 cites·20 claims
0698US9553265B1RRAM device with data storage layer having increased heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 24, 2017·33 cites·20 claims
0798US9431604B2Resistive random access memory (RRAM) and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Aug 30, 2016·29 cites·20 claims
0898US9231197B2Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·23 cites·20 claims
0998US9023699B2Resistive random access memory (RRAM) structure and method of making the RRAM structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 5, 2015·21 cites·20 claims
1098US8963114B2One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 24, 2015·32 cites·11 claims
1197US12041861B2RRAM bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·2 cites·20 claims
1297US11611038B2Method for forming RRAM with a barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 21, 2023·3 cites·20 claims
1397US9577009B1RRAM cell with PMOS access transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·29 cites·20 claims
1497US9425392B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·13 cites·20 claims
1597US6720232B1Method of fabricating an embedded DRAM for metal-insulator-metal (MIM) capacitor structureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 13, 2004·181 cites·33 claims
1696US11869564B2Embedded ferroelectric memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
1796US9099647B2One transistor and one resistive (1T1R) random access memory (RAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Aug 4, 2015·16 cites·20 claims
1896US7557399B2Metal-insulator-metal capacitorsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jul 7, 2009·38 cites·20 claims
1995US8896096B2Process-compatible decoupling capacitor and method for making the sameTU KUO-CHI·Filed 2012·Granted Nov 25, 2014·24 cites·18 claims
2094US11706930B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·2 cites·20 claims
2194US11296099B2FeRAM decoupling capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·3 cites·20 claims
2294US10163981B2Metal landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·8 cites·20 claims
2394US9583556B2Process-compatible decoupling capacitor and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·11 cites·19 claims
2493US9537094B2Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·6 cites·20 claims
2593US8921818B2Resistance variable memory structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 30, 2014·10 cites·20 claims
2693US8742390B1Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 3, 2014·15 cites·20 claims
2792US10249756B2Semiconductor device including memory and logic circuit having FETs with ferroelectric layer and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 2, 2019·9 cites·20 claims
2892US9780302B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
2992US9112148B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 18, 2015·6 cites·20 claims
3092US8643074B2Semiconductor devicePAI CHIH-YANG·Filed 2012·Granted Feb 4, 2014·17 cites·20 claims
3191US11183503B2Memory cell having top and bottom electrodes defining recessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·5 cites·20 claims
3291US9312482B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 12, 2016·9 cites·20 claims
3391US8748284B2Method of manufacturing decoupling MIM capacitor designs for interposersTZENG KUO-CHYUAN·Filed 2011·Granted Jun 10, 2014·13 cites·20 claims
3491US7851861B2MIM capacitor and metal gate transistorTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 14, 2010·22 cites·20 claims
3591US7195970B2Metal-insulator-metal capacitorsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 27, 2007·48 cites·15 claims
3691US7163853B2Method of manufacturing a capacitor and a metal gate on a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 16, 2007·20 cites·16 claims
3790US10038139B2One transistor and one resistive random access memory (RRAM) structure with spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·6 cites·20 claims
3890US9780145B2Resistive random access memory (RRAM) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
3990US9466794B2Low form voltage resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 11, 2016·6 cites·20 claims
4090US9231205B2Low form voltage resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·6 cites·18 claims
4190US8436408B2Semiconductor device with decoupling capacitor designTU KUO-CHI·Filed 2008·Granted May 7, 2013·19 cites·26 claims
4289US12356875B2RRAM bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
4389US9478638B2Resistive switching random access memory with asymmetric source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 25, 2016·6 cites·20 claims
4489US9331277B2One transistor and one resistive random access memory (RRAM) structure with spacerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 3, 2016·6 cites·20 claims
4589US9076522B2Memory cells breakdown protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 7, 2015·12 cites·19 claims
4689US8143699B2Dual-dielectric MIM capacitors for system-on-chip applicationsCHING KUO-CHENG·Filed 2009·Granted Mar 27, 2012·18 cites·21 claims
4789US6709919B2Method for making auto-self-aligned top electrodes for DRAM capacitors with improved capacitor-to-bit-line-contact overlay marginTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 23, 2004·52 cites·31 claims
4888US11800720B2Memory cell having a top electrode interconnect arranged laterally from a recessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·1 cites·20 claims
4988US10950784B2RRAM with a barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·2 cites·20 claims
5088US10622300B2Series MIM structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 14, 2020·3 cites·13 claims

Showing the top 50 of 225 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →