Inventor · disambiguated record
Kuo-Chyuan Tzeng
Also filed as: TZENG KUO-CHYUAN
44 granted patents·19 pending applications·438 citations·filing 1999–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD34TAIWAN SEMICONDUCTOR MFG23TZENG KUO-CHYUAN3TAIWAN SEMICONDUCTOR MANUFACTO1TAIWAN SEMICONDUCTOR MANUFACUTURING CO LTD1
Top patents by PatentIndex Score
63 records- 0195US10483119B1Self-aligned double patterning (SADP) methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·11 cites·20 claims
- 0293US6620679B1Method to integrate high performance 1T ram in a CMOS process using asymmetric structureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 16, 2003·61 cites·89 claims
- 0391US8748284B2Method of manufacturing decoupling MIM capacitor designs for interposersTZENG KUO-CHYUAN·Filed 2011·Granted Jun 10, 2014·13 cites·20 claims
- 0490US7091543B2Embedded dual-port DRAM processTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Aug 15, 2006·38 cites·9 claims
- 0588US8716100B2Method of fabricating metal-insulator-metal (MIM) capacitor within topmost thick inter-metal dielectric layersTZENG KUO-CHYUAN·Filed 2011·Granted May 6, 2014·8 cites·20 claims
- 0686US9257409B2Decoupling MIM capacitor designs for interposers and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·5 cites·20 claims
- 0786US2025322871A1Bit line and word line connection for memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0884US6638813B1Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 28, 2003·33 cites·30 claims
- 0983US6383863B1Approach to integrate salicide gate for embedded DRAM devicesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 7, 2002·38 cites·22 claims
- 1081US12387786B2Bit line and word line connection for memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 1180US9401395B2Decoupling MIM capacitor designs for interposers and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 26, 2016·2 cites·20 claims
- 1279US12302767B2Buffer layer in memory cell to prevent metal redepositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 1379US10818505B2Self-aligned double patterning process and semiconductor structure formed using thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 27, 2020·2 cites·20 claims
- 1478US6613690B1Approach for forming a buried stack capacitor structure featuring reduced polysilicon stringersTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 2, 2003·29 cites·30 claims
- 1577US2025359072A1Phase-change device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1676US8659121B2Semiconductor devices with orientation-free decoupling capacitors and methods of manufacture thereofTU KUO-CHI·Filed 2011·Granted Feb 25, 2014·4 cites·10 claims
- 1776US6661049B2Microelectronic capacitor structure embedded within microelectronic isolation regionTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Dec 9, 2003·21 cites·4 claims
- 1876US6207492B1Common gate and salicide word line process for low cost embedded DRAM devicesTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 27, 2001·17 cites·23 claims
- 1976US6143621ACapacitor circuit structure for determining overlay errorTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 7, 2000·44 cites·11 claims
- 2076US2025359491A1Planarization-less phase change material switchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2176US2025318147A1Memory arrays including continuous line-shaped random access memory strips and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2275US11715519B2Bit line and word line connection for memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
- 2375US10872777B2Self-aligned double patterning (SADP) methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·1 cites·20 claims
- 2475US7884408B2One-transistor random access memory technology compatible with metal gate processTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 8, 2011·4 cites·26 claims
- 2575US7271083B2One-transistor random access memory technology compatible with metal gate processTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 18, 2007·15 cites·21 claims
- 2675US2024349630A1Phase change memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2774US6242757B1Capacitor circuit structure for determining overlay errorTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 5, 2001·15 cites·9 claims
- 2874US2025241212A1Buffer layer in memory cell to prevent metal redepositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2974US2025318448A1Encapsulated phase change material switch and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3073US6436762B1Method for improving bit line to capacitor electrical failures on DRAM circuits using a wet etch-back to improve the bit-line-to-capacitor overlay marginsTAIWAN SEMICONDUCTOR MANUFACTO·Filed 2001·Granted Aug 20, 2002·19 cites·18 claims
- 3173US2025293154A1Layout for reducing loading at line sockets and/or for increasing overlay tolerance while cutting linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3272US12484459B2Planarization-less phase change material switchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 3371US2024057346A1Phase-change device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3470US12268103B2Phase change material switch with improved thermal confinement and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 3569US12369503B2Encapsulated phase change material switch and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 3669US11211120B2Bit line and word line connection for memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·0 cites·20 claims
- 3769US6794254B1Embedded dual-port DRAM processTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 21, 2004·10 cites·18 claims
- 3868US11532785B2Buffer layer in memory cell to prevent metal redepositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 3968US9269762B2Metal-insulator-metal (MIM) capacitor within topmost thick inter-metal dielectric layersTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 23, 2016·1 cites·17 claims
- 4068US9263415B2Decoupling MIM capacitor designs for interposers and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 16, 2016·1 cites·20 claims
- 4168US2025204287A1Phase change material switch with improved thermal confinement and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4268US2022336530A1Memory Arrays Including Continuous Line-Shaped Random Access Memory Strips and Method Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4367US12048258B2Phase change memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 4467US11676822B2Self-aligned double patterning process and semiconductor structure formed using thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·20 claims
- 4567US2025359034A1Back-end-of-line semiconductor device structure providing a not-gate logic function and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4665US12354951B2Layout for reducing loading at line sockets and/or for increasing overlay tolerance while cutting linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 4765US6569732B1Integrated process sequence allowing elimination of polysilicon residue and silicon damage during the fabrication of a buried stack capacitor structure in a SRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 27, 2003·12 cites·26 claims
- 4863US6661050B2Memory cell structure with trench capacitor and method for fabrication thereofTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 9, 2003·10 cites·7 claims
- 4962US6376294B1Method to define poly dog-bone for word line strapping contact at stitch area in embedded DRAM processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 23, 2002·10 cites·28 claims
- 5059US2025212705A1Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →