Inventor · disambiguated record
Kuo-Ming Wu
Also filed as: WU KUO-MING
110 granted patents·40 pending applications·486 citations·filing 2003–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD108TAIWAN SEMICONDUCTOR MFG11MEDIATEK INC8REALTEK SEMICONDUCTOR CORP7WU KUO-MING3
Top patents by PatentIndex Score
150 records- 0198US11715674B2Trim wall protection method for multi-wafer stackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·4 cites·20 claims
- 0298US11610812B2Multi-wafer capping layer for metal arcing protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 21, 2023·7 cites·20 claims
- 0398US11152276B2Trim wall protection method for multi-wafer stackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·17 cites·20 claims
- 0498US11127635B1Techniques for wafer stack processingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 21, 2021·12 cites·20 claims
- 0597US11545443B2Method for forming hybrid-bonding structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·3 cites·20 claims
- 0696US12315843B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·2 cites·20 claims
- 0796US7221021B2Method of forming high voltage devices with retrograde wellTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 22, 2007·120 cites·13 claims
- 0895US11935950B2High voltage transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 19, 2024·2 cites·20 claims
- 0995US10734285B2Bonding support structure (and related process) for wafer stackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·11 cites·20 claims
- 1095US10050018B23DIC structure and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 14, 2018·12 cites·20 claims
- 1193US9281331B2High dielectric constant structure for the vertical transfer gates of a complementary metal-oxide semiconductor (CMOS) image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 8, 2016·16 cites·12 claims
- 1292US11855158B2Semiconductor device structure having a gate structure and overlying dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 1392US10727205B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·6 cites·20 claims
- 1492US7345341B2High voltage semiconductor devices and methods for fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Mar 18, 2008·54 cites·9 claims
- 1591US11721758B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·2 cites·20 claims
- 1691US10535730B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·8 cites·20 claims
- 1791US2025366135A1Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1890US11410972B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·2 cites·20 claims
- 1990US11322481B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·2 cites·20 claims
- 2089US10727218B2Seal ring structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·5 cites·20 claims
- 2189US7602037B2High voltage semiconductor devices and methods for fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Oct 13, 2009·15 cites·19 claims
- 2288US10121867B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 6, 2018·4 cites·19 claims
- 2387US11145713B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·4 cites·20 claims
- 2486US11145709B2Semiconductor device including a capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·5 cites·20 claims
- 2585US10505038B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 10, 2019·3 cites·20 claims
- 2685US2024355784A1Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2785US2025351551A1Hybrid integrated circuit diesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2884US12484278B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 2984US11107916B2High voltage transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·2 cites·20 claims
- 3084US10847650B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·2 cites·20 claims
- 3184US9728596B1Semiconductor device and integrated inductorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 8, 2017·4 cites·19 claims
- 3284US8236642B2Fully isolated high-voltage MOS deviceWEI CHI-SAN·Filed 2010·Granted Aug 7, 2012·11 cites·20 claims
- 3383US9553087B1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·3 cites·20 claims
- 3483US2025241053A1Techniques for wafer stack processingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3583US2024186412A1High Voltage Transistor StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3682US12289905B2Semiconductor structure and associated fabricating methodPARABELLUM STRATEGIC OPPORTUNITIES FUND LLC·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 3782US7843002B2Fully isolated high-voltage MOS deviceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 30, 2010·9 cites·20 claims
- 3882US2025227953A1Semiconductor structure and associated fabricating methodPARABELLUM STRATEGIC OPPORTUNITIES FUND LLC·Filed 2025·Application pending·0 cites
- 3982US2025318290A1Stilted pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4081US12211741B2Multi-wafer capping layer for metal arcing protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 4181US10522514B23DIC structure and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·2 cites·20 claims
- 4281US9991440B2Magnetoresistive random access memory cell and fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 5, 2018·3 cites·19 claims
- 4381US9178136B2Magnetoresistive random access memory cell and fabricating the sameWU KUO-MING·Filed 2012·Granted Nov 3, 2015·4 cites·14 claims
- 4481US2025105056A1Multi-wafer capping layer for metal arcing protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4580US12317722B2Color display with color filter layer comprising two-dimensional photonic crystals formed in a dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 4680US12293946B2Techniques for wafer stack processingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 6, 2025·0 cites·20 claims
- 4780US12125763B2Trim wall protection method for multi-wafer stackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 4880US9735266B2Self-aligned contact for trench MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 15, 2017·4 cites·20 claims
- 4980US2025357431A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5079US11984431B23DIC structure and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
Showing the top 50 of 150 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →