Inventor · disambiguated record
Kuang-Wei Yang
Also filed as: YANG KUANG · YANG KUANG-WEI
13 granted patents·17 pending applications·12 citations·filing 2004–2025
86Inventor score
Top patents by PatentIndex Score
30 records- 0198US11538749B2Interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 27, 2022·7 cites·20 claims
- 0296US11854963B2Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
- 0393US12132000B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 29, 2024·2 cites·20 claims
- 0487US2025364400A1Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0586US2025357195A1Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0683US12431386B2Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 0782US12463134B2Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 0881US12205946B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 0976US12484310B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 1074US2024379416A1Semiconductor device having thermally conductive air gap structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1174US2024379413A1Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1274US2024379560A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1374US2024371690A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1473US2025309041A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1571US12062572B2Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 1670US11923357B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 1769US12094764B2Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 1868US12412804B2Semiconductor structure with improved heat dissipationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 1968US12074060B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
- 2065US2022359385A1Interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2163US12482703B2Semiconductor device having thermally conductive air gap structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 25, 2025·0 cites·20 claims
- 2260US2025226282A1Electronic component and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2358US2025112088A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2458US2025087532A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2557US2025132247A1Interconnection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2657US2025118598A1Interconnection structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2757US2025149436A1Interconnect structure with low rc delay and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2855US2024413074A1Interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2953US2024234203A1Semiconductor device having low dielectric capacitance and good electrical breakdown performance, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3033US2005287740A1System and method of forming a split-gate flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →