Inventor · disambiguated record
Kuniyoshi Yoshikawa
Also filed as: YOSHIKAWA KUNIYOSHI
19 granted patents·933 citations·filing 1988–2001
96Inventor score
Files withTOSHIBA KK19
Top patents by PatentIndex Score
19 records- 0198US6335554B1Semiconductor MemoryTOSHIBA KK·Filed 2000·Granted Jan 1, 2002·253 cites·34 claims
- 0296US4929988ANon-volatile semiconductor memory device and method of the manufacture thereofTOSHIBA KK·Filed 1988·Granted May 29, 1990·126 cites·7 claims
- 0395US6632714B2Method for manufacturing semiconductor memoryTOSHIBA KK·Filed 2001·Granted Oct 14, 2003·103 cites·26 claims
- 0491US5304829ANonvolatile semiconductor deviceTOSHIBA KK·Filed 1991·Granted Apr 19, 1994·89 cites·25 claims
- 0589US5586073ASemiconductor device having a multi-layer channel structureTOSHIBA KK·Filed 1994·Granted Dec 17, 1996·83 cites·89 claims
- 0679US4925807AMethod of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1989·Granted May 15, 1990·43 cites·15 claims
- 0775US4881108ASemiconductor deviceTOSHIBA KK·Filed 1988·Granted Nov 14, 1989·31 cites·3 claims
- 0871US5025417ASemiconductor memory device capable of preventing data of non-selected memory cell from being degradedTOSHIBA KK·Filed 1989·Granted Jun 18, 1991·26 cites·13 claims
- 0969US5734612ASemiconductor memory device with a plurality of memory cells connected to bit lines and method of adjusting the sameTOSHIBA KK·Filed 1996·Granted Mar 31, 1998·29 cites·20 claims
- 1065US5229632AElectrically erasable memory device having erase-electrode connected to substrate junctionTOSHIBA KK·Filed 1991·Granted Jul 20, 1993·25 cites·31 claims
- 1162US5053840ASemiconductor device having a gate electrode consisting of a plurality of layersTOSHIBA KK·Filed 1989·Granted Oct 1, 1991·19 cites·16 claims
- 1260US5210044AMethod of manufacturing a floating gate type nonvolatile memory cell having an offset regionTOSHIBA KK·Filed 1991·Granted May 11, 1993·20 cites·28 claims
- 1359US5015601AMethod of manufacturing a nonvolatile semiconductor deviceTOSHIBA KK·Filed 1990·Granted May 14, 1991·17 cites·3 claims
- 1455US5159431ANonvolatile semiconductor device with a trench isolatorTOSHIBA KK·Filed 1991·Granted Oct 27, 1992·14 cites·9 claims
- 1552US5365098ANon-volatile semiconductor memory having improved erasure characteristicsTOSHIBA KK·Filed 1992·Granted Nov 15, 1994·14 cites·17 claims
- 1651US5444655ANon-volatile semiconductor memory device with a small distribution width of cell transistor threshold voltage after erasing dataTOSHIBA KK·Filed 1994·Granted Aug 22, 1995·13 cites·11 claims
- 1742US4885261AMethod for isolating a semiconductor elementTOSHIBA KK·Filed 1989·Granted Dec 5, 1989·11 cites·13 claims
- 1841US5378910AMemory transistor having increased interelectrode capacitanceTOSHIBA KK·Filed 1993·Granted Jan 3, 1995·8 cites·8 claims
- 1940US5679590AMethod for manufacturing contact hole for a nonvolatile semiconductor deviceTOSHIBA KK·Filed 1996·Granted Oct 21, 1997·9 cites·11 claims
Join the waitlist — get patent alerts
Get an alert when Kuniyoshi Yoshikawa files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →