Inventor · disambiguated record
Kuo-Feng Yu
Also filed as: YU KUO-FENG
99 granted patents·44 pending applications·310 citations·filing 2004–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD122TAIWAN SEMICONDUCTOR MFG14CHUNG SHU-WEI2CHEN JIAN-HAO1HORNG JAW-JUINN1
Top patents by PatentIndex Score
143 records- 0198US11404322B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 2, 2022·4 cites·20 claims
- 0297US10164048B1Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·14 cites·20 claims
- 0396US12142657B2Gate structure for multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·2 cites·20 claims
- 0496US11972982B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·2 cites·20 claims
- 0596US10686074B2Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·10 cites·20 claims
- 0696US10468500B1FinFET fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·9 cites·20 claims
- 0796US8173499B2Method of fabricating a gate stack integration of complementary MOS deviceCHUNG SHU-WEI·Filed 2010·Granted May 8, 2012·123 cites·18 claims
- 0895US9337316B2Method for FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·16 cites·20 claims
- 0994US12255104B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·1 cites·20 claims
- 1094US11894276B2Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
- 1193US8350327B2High voltage device with reduced leakageTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 8, 2013·24 cites·19 claims
- 1292US11769817B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 26, 2023·2 cites·20 claims
- 1392US11195931B2Gate structure, semiconductor device and the method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 7, 2021·2 cites·20 claims
- 1491US10651287B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·4 cites·20 claims
- 1589US10396156B2Method for FinFET LDD dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 27, 2019·4 cites·20 claims
- 1689US2025364262A1Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1789US2025357128A1Methods of forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1888US10522641B2Gate spacer and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·3 cites·20 claims
- 1988US9577070B2Gate spacers and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 21, 2017·5 cites·20 claims
- 2088US8859386B2Semiconductor devices, methods of manufacture thereof, and methods of forming resistorsLU CHIA-YU·Filed 2012·Granted Oct 14, 2014·13 cites·20 claims
- 2187US2024379814A1Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2287US2025308904A1Methods for doping high-k metal gates for tuning threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2386US12218213B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·1 cites·20 claims
- 2486US12142663B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 2586US7420250B2Electrostatic discharge protection device having light doped regionsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 2, 2008·14 cites·19 claims
- 2685US12469710B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 2785US2025351539A1Post gate dielectric processing for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2884US12302627B2Semiconductor device with non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 2984US12119389B2Semiconductor device with reduced trap defect and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·0 cites·20 claims
- 3084US10991800B2Method for FinFET LDD dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·2 cites·18 claims
- 3184US9711620B2Method for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·3 cites·20 claims
- 3284US2024379365A1Methods for doping high-k metal gates for tuning threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3384US2024371970A1Finfet fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3484US2024371974A1Semiconductor device with reduced trap defect and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3583US12317574B2Device providing multiple threshold voltages and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 3683US11605720B2Metal gate capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·1 cites·20 claims
- 3783US9142404B2Systems and methods for annealing semiconductor device structures using microwave radiationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 22, 2015·5 cites·19 claims
- 3882US12266575B2Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 1, 2025·0 cites·20 claims
- 3982US11398384B2Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·1 cites·20 claims
- 4082US10276715B2Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 30, 2019·3 cites·18 claims
- 4182US9111768B2Semiconductor devices, methods of manufacture thereof, and methods of forming resistorsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 18, 2015·5 cites·20 claims
- 4282US2024379364A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4382US2025267920A1Semiconductor device with non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4482US2025366165A1Metal gates for multi-gate semiconductor devices and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4580US12132107B2Semiconductor structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·0 cites·20 claims
- 4680US11276766B2FinFET fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·1 cites·20 claims
- 4780US10741662B2Gate spacer and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 11, 2020·1 cites·20 claims
- 4880US2025359162A1Field effect transistor with strained channels and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4980US2025359116A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5080US2025287677A1Device providing multiple threshold voltages and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 143 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →