Inventor · disambiguated record
Kwang Choong Kim
Also filed as: KIM KWANG C · KIM KWANG CHOONG
18 granted patents·3 pending applications·92 citations·filing 2007–2013
93Inventor score
Top patents by PatentIndex Score
21 records- 0195US7723216B2In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)NUNIV CALIFORNIA·Filed 2007·Granted May 25, 2010·24 cites·27 claims
- 0291US8211724B2Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the sameKIM KWANG CHOONG·Filed 2009·Granted Jul 3, 2012·19 cites·15 claims
- 0390US8183072B2Light emitting device having plurality of non-polar light emitting cells and method of fabricating the sameSEO WON CHEOL·Filed 2009·Granted May 22, 2012·16 cites·20 claims
- 0489US8294171B2Light emitting device having plurality of non-polar light emitting cells and method of fabricating the sameSEO WON CHEOL·Filed 2012·Granted Oct 23, 2012·5 cites·20 claims
- 0587US8648380B2Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the sameSEOUL OPTO DEVICE CO LTD·Filed 2013·Granted Feb 11, 2014·5 cites·13 claims
- 0683US8105919B2In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)NCHAKRABORTY ARPAN·Filed 2010·Granted Jan 31, 2012·4 cites·23 claims
- 0781US8211723B2Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodesFEEZELL DANIEL F·Filed 2008·Granted Jul 3, 2012·8 cites·26 claims
- 0875US8643024B2In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)NCHAKRABORTY ARPAN·Filed 2011·Granted Feb 4, 2014·2 cites·32 claims
- 0975US7842527B2Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devicesUNIV CALIFORNIA·Filed 2007·Granted Nov 30, 2010·3 cites·28 claims
- 1069US9040327B2Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodesFEEZELL DANIEL F·Filed 2012·Granted May 26, 2015·1 cites·14 claims
- 1169US7839903B2Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasersUNIV CALIFORNIA·Filed 2008·Granted Nov 23, 2010·2 cites·24 claims
- 1263US8956896B2Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devicesSCHMIDT MATHEW C·Filed 2012·Granted Feb 17, 2015·1 cites·26 claims
- 1363US8716046B2Light emitting device and method for manufacturing the sameKIM GYU BEOM·Filed 2009·Granted May 6, 2014·2 cites·6 claims
- 1458US8436389B2Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the sameKIM KWANG CHOONG·Filed 2012·Granted May 7, 2013·0 cites·11 claims
- 1552US2009242870A1Light emitting device and method for manufacturing the sameSEOUL OPTO DEVICE CO LTD·Filed 2008·Application pending·0 cites
- 1652US2008163814A1CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATESUNIV CALIFORNIA·Filed 2007·Application pending·0 cites
- 1750US8716048B2Light emitting device and method for manufacturing the sameKIM GYU BEOM·Filed 2010·Granted May 6, 2014·0 cites·7 claims
- 1849US9130119B2Non-polar and semi-polar light emitting devicesDENBAARS STEVEN P·Filed 2007·Granted Sep 8, 2015·0 cites·26 claims
- 1948US8588260B2Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasersFARRELL ROBERT M·Filed 2010·Granted Nov 19, 2013·0 cites·20 claims
- 2048US2012068192A1CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATESKIM KWANG C·Filed 2011·Application pending·0 cites
- 2145US8178373B2Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devicesSCHMIDT MATHEW C·Filed 2010·Granted May 15, 2012·0 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →