Inventor · disambiguated record
Kwang Young Ko
Also filed as: KO KWANG Y · KO KWANG YOUNG
18 granted patents·7 pending applications·18 citations·filing 2004–2022
89Inventor score
Files withDONGBU ELECTRONICS CO LTD9DONGBU HITEK CO LTD8KO KWANG YOUNG4DB HITEK CO LTD1DONGBU HITEK LTD1
Top patents by PatentIndex Score
25 records- 0169US7875929B2Semiconductor device and method for manufacturing the sameDONGBU HITEK CO LTD·Filed 2007·Granted Jan 25, 2011·4 cites·7 claims
- 0268US7374999B2Semiconductor deviceDONGBU ELECTRONICS CO LTD·Filed 2005·Granted May 20, 2008·4 cites·4 claims
- 0360US7573100B2High voltage semiconductor device and method for fabricating the sameDONGBU ELECTRONICS CO LTD·Filed 2006·Granted Aug 11, 2009·2 cites·6 claims
- 0458US8193576B2Semiconductor memory device and method of fabricating the sameKO KWANG-YOUNG·Filed 2009·Granted Jun 5, 2012·2 cites·19 claims
- 0558US7883971B2Gate structure in a trench region of a semiconductor device and method for manufacturing the sameDONGBU ELECTRONICS CO LTD·Filed 2009·Granted Feb 8, 2011·1 cites·17 claims
- 0657US8022483B2Semiconductor and manufacturing method for the sameDONGBU HITEK CO LTD·Filed 2009·Granted Sep 20, 2011·1 cites·18 claims
- 0757US7541641B2Gate structure in a trench region of a semiconductor device and method for manufacturing the sameDONGBU ELECTRONICS CO LTD·Filed 2006·Granted Jun 2, 2009·1 cites·15 claims
- 0857US7371632B2Semiconductor device having high-voltage transistor and PIP capacitor and method for fabricating the sameDONGBU ELECTRONICS CO LTD·Filed 2005·Granted May 13, 2008·1 cites·4 claims
- 0954US8063431B2EEPROM and method for manufacturing EEPROMKO KWANG YOUNG·Filed 2009·Granted Nov 22, 2011·1 cites·20 claims
- 1054US7977753B2High voltage BICMOS device and method for manufacturing the sameDONGBU ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·0 cites·18 claims
- 1153US2023142541A1Superjunction semiconductor device and method for manufacturing sameDB HITEK CO LTD·Filed 2022·Application pending·0 cites
- 1249US7579230B2High voltage BICMOS device and method for manufacturing the sameDONGBU ELECTRONICS CO LTD·Filed 2006·Granted Aug 25, 2009·0 cites·18 claims
- 1348US7714382B2Trench gate semiconductor with NPN junctions beneath shallow trench isolation structuresDONGBU HITEK CO LTD·Filed 2008·Granted May 11, 2010·0 cites·10 claims
- 1444US7524721B2High voltage CMOS device and method of fabricating the sameDONGBU HITEK CO LTD·Filed 2007·Granted Apr 28, 2009·0 cites·9 claims
- 1544US2008191259A1Semiconductor device having high-voltage transistor and PIP capacitor and method for fabricating the sameKO KWANG YOUNG·Filed 2008·Application pending·0 cites
- 1644US2008054348A1Semiconductor device and a method of fabricating the sameDONGBU HITEK CO LTD·Filed 2007·Application pending·0 cites
- 1741US7838378B2Semiconductor device and manufacturing method thereofDONGBU HITEK CO LTD·Filed 2007·Granted Nov 23, 2010·0 cites·5 claims
- 1841US7642154B2BiCMOS device and method of manufacturing a biCMOS deviceDONGBU HITEK CO LTD·Filed 2006·Granted Jan 5, 2010·0 cites·10 claims
- 1941US7422951B2Method of fabricating self-aligned bipolar transistorDONGBU ELECTRONICS CO LTD·Filed 2004·Granted Sep 9, 2008·1 cites·3 claims
- 2040US2010140699A1Semiconductor device and method for manufacturing the sameKO KWANG-YOUNG·Filed 2009·Application pending·0 cites
- 2136US7253030B2Method of fabricating high-voltage CMOS deviceDONGBU ELECTRONICS CO LTD·Filed 2004·Granted Aug 7, 2007·0 cites·3 claims
- 2236US2006138549A1High-voltage transistor and fabricating method thereofKO KWANG Y·Filed 2005·Application pending·0 cites
- 2335US2005179092A1Method of fabricating high voltage device using double epitaxial growthDONGBUANAM SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 2434US7642169B2Method of making a bipolar junction transistorDONGBU HITEK LTD·Filed 2006·Granted Jan 5, 2010·0 cites·9 claims
- 2534US2017294505A1Gate electrode structure and high voltage semiconductor device having the sameDONGBU HITEK CO LTD·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →