Inventor · disambiguated record
Kwang-Jin Lee
Also filed as: LEE KWANG JIN · LEE KWANG JIN MICHAEL
140 granted patents·28 pending applications·1,294 citations·filing 1998–2024
99Inventor score
Top patents by PatentIndex Score
168 records- 0198US7542356B2Semiconductor memory device and method for reducing cell activation during write operationsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·76 cites·18 claims
- 0298US7529124B2Phase change memory devices and systems, and related programming methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 5, 2009·77 cites·41 claims
- 0397US8134866B2Phase change memory devices and systems, and related programming methodsBAE JUN-SOO·Filed 2010·Granted Mar 13, 2012·64 cites·20 claims
- 0497US8050084B2Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Nov 1, 2011·42 cites·19 claims
- 0597US6307424B1Programmable impedance control output circuit and programmable impedance control method thereof in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 23, 2001·92 cites·43 claims
- 0696US8159867B2Phase change memory devices and systems, and related programming methodsCHO WOO-YEONG·Filed 2009·Granted Apr 17, 2012·49 cites·28 claims
- 0796US7349245B2Non-volatile phase-change memory device and associated program-suspend-read operationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 25, 2008·55 cites·42 claims
- 0895US7283387B2Phase change random access memory device having variable drive voltage circuitSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 16, 2007·44 cites·18 claims
- 0994US8139432B2Variable resistance memory device and system thereofCHOI BYUNG-GIL·Filed 2010·Granted Mar 20, 2012·21 cites·19 claims
- 1094US7522449B2Phase change memory device and related programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 21, 2009·35 cites·20 claims
- 1193US8116127B2Phase change memory devices and systems, and related programming methodsCHO WOO-YEONG·Filed 2009·Granted Feb 14, 2012·24 cites·39 claims
- 1293US7486536B2Phase-changeable memory device and method of programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 3, 2009·31 cites·37 claims
- 1390US11003382B2Apparatus for outputting internal state of memory apparatus and memory system using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 11, 2021·7 cites·17 claims
- 1490US8116117B2Method of driving multi-level variable resistive memory device and multi-level variable resistive memory deviceCHO WOO-YEONG·Filed 2009·Granted Feb 14, 2012·22 cites·15 claims
- 1589US8547724B2Nonvolatile memory device comprising one-time-programmable lock bit registerLEE YONG-JUN·Filed 2011·Granted Oct 1, 2013·18 cites·11 claims
- 1689US7535747B2Phase change random access memory and related methods of operationSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 19, 2009·21 cites·24 claims
- 1788US8190968B2Semiconductor memory device and data error detection and correction method of the sameLEE KWANG-JIN·Filed 2011·Granted May 29, 2012·10 cites·20 claims
- 1888US7746688B2PRAM and method of firing memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 29, 2010·20 cites·24 claims
- 1987US10093760B2Vinyl chloride-vinyl acetate copolymer and method of preparing the sameLG CHEMICAL LTD·Filed 2016·Granted Oct 9, 2018·2 cites·17 claims
- 2087US8143653B2Variable resistance memory device and system thereofCHO WOO-YEONG·Filed 2009·Granted Mar 27, 2012·14 cites·8 claims
- 2186US7881145B2Semiconductor device and semiconductor system having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 1, 2011·14 cites·20 claims
- 2285US11795258B2Method for preparing core-shell copolymer, core-shell copolymer prepared therefrom and resin composition including the sameLG CHEMICAL LTD·Filed 2019·Granted Oct 24, 2023·2 cites·13 claims
- 2385US10644069B2Memory devices having crosspoint memory arrays therein with multi-level word line and bit line structuresSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 5, 2020·6 cites·20 claims
- 2485US7952956B2Variable resistance memory device and systemSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 31, 2011·15 cites·24 claims
- 2585US6901014B2Circuits and methods for screening for defective memory cells in semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 31, 2005·47 cites·14 claims
- 2685US2025333589A1Resin composition and molded articleLG CHEMICAL LTD·Filed 2023·Application pending·0 cites
- 2784US7909177B2Braid-reinforced composite hollow fiber membraneKOLON INC·Filed 2006·Granted Mar 22, 2011·11 cites·23 claims
- 2884US7548467B2Bias voltage generator and method generating bias voltage for semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 16, 2009·14 cites·20 claims
- 2983US6594818B2Memory architecture permitting selection of storage density after fabrication of active circuitrySAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 15, 2003·34 cites·26 claims
- 3082US10346087B2Apparatus for outputting internal state of memory apparatus and memory system using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 9, 2019·2 cites·9 claims
- 3182US7949928B2Semiconductor memory device and data error detection and correction method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 24, 2011·10 cites·18 claims
- 3282US7701757B2Phase change random access memory device and related methods of operationSAMSUNG ELECTRONCIS CO LTD·Filed 2007·Granted Apr 20, 2010·9 cites·26 claims
- 3381US12189976B2Apparatus for outputting internal state of memory apparatus and memory system using the apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·19 claims
- 3481US8223527B2Semiconductor device having memory array, method of writing, and systems associated therewithLEE KWANG JIN·Filed 2008·Granted Jul 17, 2012·12 cites·15 claims
- 3581US7457152B2Non-volatile memory devices and systems including phase-change one-time-programmable (OTP) memory cells and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 25, 2008·12 cites·33 claims
- 3681US6507224B1High speed input receiver for generating pulse signalSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 14, 2003·24 cites·12 claims
- 3780US7688620B2Nonvolatile memory device and related methods of operationSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 30, 2010·10 cites·21 claims
- 3879US7471553B2Phase change memory device and program method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 30, 2008·10 cites·11 claims
- 3978US9405615B2Method of operating nonvolatile memory device comprising resistance materialSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 2, 2016·6 cites·17 claims
- 4078US8248860B2Memory device using a variable resistive elementLEE KWANG-JIN·Filed 2010·Granted Aug 21, 2012·5 cites·13 claims
- 4178US7978539B2Semiconductor device having resistance based memory array, method of reading, and systems associated therewithSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 12, 2011·10 cites·40 claims
- 4277US8713408B2Methods of operating non-volatile memory devices during write operation interruption, non-volatile memory devices, memories and electronic systems operating the sameLEE KWANG JIN·Filed 2011·Granted Apr 29, 2014·4 cites·9 claims
- 4377US8189422B2Semiconductor device and semiconductor system having the sameLEE KWANG JIN·Filed 2011·Granted May 29, 2012·5 cites·9 claims
- 4476US9799399B2Nonvolatile memory devices including controller for operating nonvolatile memory cell array layer in memory chip in one of memory mode and storage modeSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 24, 2017·4 cites·6 claims
- 4575US7751232B2Method of testing PRAM deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 6, 2010·7 cites·15 claims
- 4674US8588010B2Semiconductor device having resistance based memory array, method of reading and writing, and systems associated therewithLEE KWANG JIN·Filed 2011·Granted Nov 19, 2013·4 cites·11 claims
- 4774US6459652B1Semiconductor memory device having echo clock pathSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 1, 2002·21 cites·15 claims
- 4874US2025354039A1Curable Resin Composition and Adhesive CompositionLG CHEMICAL LTD·Filed 2024·Application pending·0 cites
- 4973US9087220B2Nonvolatile memory cell with authentication key storageCHANG SANG HOAN·Filed 2012·Granted Jul 21, 2015·4 cites·12 claims
- 5073US9034189B2Pressurized hollow fiber membrane moduleRYU JAE HEE·Filed 2012·Granted May 19, 2015·4 cites·8 claims
Showing the top 50 of 168 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →