Inventor · disambiguated record
Kwang-Ming Lin
Also filed as: LIN KWANG-MING
27 granted patents·2 pending applications·413 citations·filing 1991–2023
96Inventor score
Files withVANGUARD INT SEMICONDUCT CORP13TAIWAN SEMICONDUCTOR MFG9TSMC SOLAR LTD3LIN GEENG-LIH1LIN KWANG-MING1
Top patents by PatentIndex Score
29 records- 0192US6667230B2Passivation and planarization process for flip chip packagesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Dec 23, 2003·71 cites·26 claims
- 0286US6635576B1Method of fabricating borderless contact using graded-stair etch stop layersTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 21, 2003·44 cites·29 claims
- 0385US5252515AMethod for field inversion free multiple layer metallurgy VLSI processingTAIWAN SEMICONDUCTOR MFG·Filed 1991·Granted Oct 12, 1993·61 cites·20 claims
- 0481US7821082B1Method for increasing breaking down voltage of lateral diffused metal oxide semiconductor transistorVANGUARD INT SEMICONDUCT CORP·Filed 2009·Granted Oct 26, 2010·13 cites·16 claims
- 0581US6664177B1Dielectric ARC scheme to improve photo window in dual damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 16, 2003·31 cites·31 claims
- 0677US5334554ANitrogen plasma treatment to prevent field device leakage in VLSI processingTAIWAN SEMICONDUCTOR MFG·Filed 1992·Granted Aug 2, 1994·69 cites·17 claims
- 0776US8921202B2Semiconductor device and fabrication method thereofLIN GEENG-LIH·Filed 2011·Granted Dec 30, 2014·5 cites·10 claims
- 0875US6083828AMethod for forming a self-aligned contactUNITED INTEGRATED CIRCUITS CORP·Filed 1999·Granted Jul 4, 2000·52 cites·18 claims
- 0974US9385260B2Apparatus and methods for forming thin film solar cell materialsTSMC SOLAR LTD·Filed 2013·Granted Jul 5, 2016·2 cites·20 claims
- 1069US11989966B2Semiconductor devices and methods for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2021·Granted May 21, 2024·0 cites·19 claims
- 1164US10935805B2Optical sensor and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Mar 2, 2021·1 cites·19 claims
- 1264US6551927B1CoSix process to improve junction leakageTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 22, 2003·13 cites·24 claims
- 1364US6455382B1Multi-step method for forming sacrificial silicon oxide layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 24, 2002·9 cites·15 claims
- 1462US11569121B2Methods for forming semiconductor devicesVANGUARD INT SEMICONDUCT CORP·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 1562US11177397B2Semiconductor devices and methods for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Nov 16, 2021·0 cites·16 claims
- 1657US9112065B2Method of curing solar cells to reduce lamination induced efficiency lossTSMC SOLAR LTD·Filed 2013·Granted Aug 18, 2015·0 cites·20 claims
- 1756US9443943B2Semiconductor device and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Sep 13, 2016·0 cites·12 claims
- 1856US7745343B1Method for fabricating semiconductor device with fuse elementVANGUARD INT SEMICONDUCT CORP·Filed 2009·Granted Jun 29, 2010·2 cites·11 claims
- 1954US11315964B2Optical sensors and methods for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Apr 26, 2022·0 cites·16 claims
- 2054US5461254AMethod and resulting device for field inversion free multiple layer metallurgy VLSI processingTAIWAN SEMICONDUCTOR MFG·Filed 1994·Granted Oct 24, 1995·14 cites·16 claims
- 2153US10770602B1Optical sensor and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Sep 8, 2020·0 cites·19 claims
- 2252US10971355B2Substrates and methods for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Apr 6, 2021·0 cites·20 claims
- 2352US2025133758A1Method for forming semiconductor structureVANGUARD INT SEMICONDUCT CORP·Filed 2023·Application pending·0 cites
- 2448US2014273329A1Solar cell laser scribing methodsTSMC SOLAR LTD·Filed 2013·Application pending·0 cites
- 2545US11955397B2Semiconductor structureVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Apr 9, 2024·0 cites·17 claims
- 2643US10763288B1Semiconductor device and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Sep 1, 2020·0 cites·19 claims
- 2743US6316368B1Method of fabricating a node contactUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 13, 2001·12 cites·13 claims
- 2839US5248384ARapid thermal treatment to eliminate metal void formation in VLSI manufacturing processTAIWAN SEMICONDUCTOR MFG·Filed 1991·Granted Sep 28, 1993·14 cites·19 claims
- 2933US9142671B2Lateral double-diffused metal oxide semiconductorLIN KWANG-MING·Filed 2009·Granted Sep 22, 2015·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →