Inventor · disambiguated record
Kwong-Jr Tsai
Also filed as: TSAI KWONG-JR
7 granted patents·354 citations·filing 1997–1999
89Inventor score
Files withVANGUARD INT SEMICONDUCT CORP7
Top patents by PatentIndex Score
7 records- 0193US5893734AMethod for fabricating capacitor-under-bit line (CUB) dynamic random access memory (DRAM) using tungsten landing plug contactsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Apr 13, 1999·112 cites·29 claims
- 0291US6017614APlasma-enhanced chemical vapor deposited SIO2 /SI3 N4 multilayer passivation layer for semiconductor applicationsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jan 25, 2000·70 cites·4 claims
- 0389US5851603AMethod for making a plasma-enhanced chemical vapor deposited SiO2 Si3 N4 multilayer passivation layer for semiconductor applicationsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Dec 22, 1998·59 cites·18 claims
- 0472US5962344APlasma treatment method for PECVD silicon nitride films for improved passivation layers on semiconductor metal interconnectionsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Oct 5, 1999·44 cites·25 claims
- 0569US6107171AMethod to manufacture metal gate of integrated circuitsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Aug 22, 2000·30 cites·20 claims
- 0661US6277719B1Method for fabricating a low resistance Poly-Si/metal gateVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Aug 21, 2001·28 cites·19 claims
- 0744US5943599AMethod of fabricating a passivation layer for integrated circuitsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Aug 24, 1999·11 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →