Inventor · disambiguated record
Kyooho Jung
Also filed as: JUNG KYOOHO
24 granted patents·14 pending applications·19 citations·filing 2019–2025
92Inventor score
Files withSAMSUNG ELECTRONICS CO LTD38
Top patents by PatentIndex Score
38 records- 0194US11133314B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 28, 2021·4 cites·20 claims
- 0294US11081338B2Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 3, 2021·4 cites·20 claims
- 0393US11641730B2Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 2, 2023·2 cites·20 claims
- 0487US11239239B2Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 1, 2022·2 cites·20 claims
- 0587US10854709B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 1, 2020·5 cites·19 claims
- 0683US12513919B2Method of manufacturing metal nitride film and electronic device including metal nitride filmSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·13 claims
- 0781US11227912B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 18, 2022·2 cites·13 claims
- 0879US11810946B2Integrated circuit device including capacitor with metal nitrate interfacial layerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
- 0979US11798980B2Integrated circuit device and electronic device including capacitor with interfacial layer containing metal element, other element, nitrogen, and oxygenSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 1078US2024373620A1Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1175US12324145B2Semiconductor device with capping conductive layer on an electrode and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·18 claims
- 1273US11778805B2Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 1372US12082395B2Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 1471US11424317B2Method of manufacturing metal nitride film and electronic device including metal nitride filmSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·21 claims
- 1568US11600621B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 1668US2023017348A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1767US12063772B2Semiconductor device including capacitor with pillar-shaped bottom electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
- 1867US11728160B2Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 1966US12349373B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 1, 2025·0 cites·5 claims
- 2064US11716840B2Semiconductor memory device including capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 1, 2023·0 cites·20 claims
- 2164US11658024B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 23, 2023·0 cites·10 claims
- 2264US2025220879A1Vertically stacked memory device and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2363US11476253B2Semiconductor memory device including a multi-layer electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·20 claims
- 2462US11665884B2Semiconductor device with capping conductive layer on an electrode and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 2560US11910592B2Capacitor and a DRAM device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·16 claims
- 2660US10867784B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 2759US2025081431A1Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2858US2025220997A1Semiconductor device, electronic apparatus having the same, and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2957US2025081483A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3055US2024015946A1Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3155US2024387608A1Capacitor and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3253US2024371863A1Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3352US2024387612A1Capacitor and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3451US2023361160A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3550US2024162278A1Capacitor structure and semiconductor device including sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3649US12080710B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 3747US2025254852A1Semiconductor device, and electronic apparatus and memory device both including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3845US2024015948A1Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →