Inventor · disambiguated record
Kyozo Kanamoto
Also filed as: KANAMOTO KYOZO
14 granted patents·4 pending applications·458 citations·filing 1996–2011
92Inventor score
Top patents by PatentIndex Score
18 records- 0198US5627390ASemiconductor device with columnsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 6, 1997·200 cites·8 claims
- 0294US5780888ASemiconductor device with storage nodeMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 14, 1998·94 cites·11 claims
- 0392US6150688ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 21, 2000·75 cites·17 claims
- 0491US6303425B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 16, 2001·45 cites·15 claims
- 0589US6383860B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 7, 2002·36 cites·15 claims
- 0671US7582908B2Nitride semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Sep 1, 2009·3 cites·17 claims
- 0766US7964424B2Method for manufacturing nitride semiconductor light-emitting elementMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Jun 21, 2011·2 cites·19 claims
- 0862US7939943B2Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layerMITSUBISHI ELECTRIC CORP·Filed 2008·Granted May 10, 2011·1 cites·6 claims
- 0961US8163576B2Nitride semiconductor device having a silicon-containing layer and manufacturing method thereofSHIOZAWA KATSUOMI·Filed 2009·Granted Apr 24, 2012·2 cites·10 claims
- 1053US7795738B2Nitride semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Sep 14, 2010·0 cites·16 claims
- 1152US7683398B2Nitride semiconductor device having a silicon-containing connection layer and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Mar 23, 2010·0 cites·3 claims
- 1248US8546682B2Photoelectric converter and manufacturing method thereof, and photoelectric conversion moduleKANAMOTO KYOZO·Filed 2011·Granted Oct 1, 2013·0 cites·18 claims
- 1348US7791097B2Nitride semiconductor device and manufacturing method of the sameMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Sep 7, 2010·0 cites·10 claims
- 1447US2009245311A1Process for producing nitride semiconductor laser, and nitride semiconductor laserMITSUBISHI ELECTRIC CORP·Filed 2009·Application pending·0 cites
- 1546US2009160054A1Nitride semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 1646US2009127661A1Nitride semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 1745US7678597B2Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contactMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Mar 16, 2010·0 cites·7 claims
- 1841US2009170304A1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Kyozo Kanamoto files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →