Inventor · disambiguated record
Kyoman Kang
Also filed as: KANG KYOMAN
9 granted patents·1 pending application·46 citations·filing 2015–2025
83Inventor score
Top patents by PatentIndex Score
10 records- 0192US9552872B2Memory deviceINDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIV·Filed 2015·Granted Jan 24, 2017·28 cites·17 claims
- 0284US10290343B2Memory devices that sample latch trip voltages prior to reading data into latches and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 14, 2019·8 cites·24 claims
- 0382US9576623B2Sense amplifier and semiconductor memory device employing the sameINDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIV·Filed 2015·Granted Feb 21, 2017·8 cites·19 claims
- 0481US11386974B2Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 12, 2022·1 cites·20 claims
- 0579US11600350B2Methods of testing nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 7, 2023·1 cites·20 claims
- 0674US12094552B2Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 0774US2025246251A1Memory device including vertical channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0868US11804280B2Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·19 claims
- 0965US12347500B2Memory device including vertical channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 1048US12002518B2Memory device performing temperature compensation and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →