Inventor · disambiguated record
Kyong-Min Kim
Also filed as: ILIC SRDJAN · KIM KYONG M · KIM KYONG-MIN · TEMPLE HAROLD E
47 granted patents·10 pending applications·771 citations·filing 1976–2007
98Inventor score
Files withHYNIX SEMICONDUCTOR INC18IBM10MEMC ELECTRONIC MATERIALS8HYUNDAI ELECTRONICS IND7SAMSUNG ELECTRONICS CO LTD5
Top patents by PatentIndex Score
57 records- 0190US4090851ASi3 N4 Coated crucible and die means for growing single crystalline silicon sheetsRCA CORP·Filed 1976·Granted May 23, 1978·48 cites·2 claims
- 0288US5779791AProcess for controlling thermal history of Czochralski-grown siliconMEMC ELECTRONIC MATERIALS·Filed 1996·Granted Jul 14, 1998·67 cites·51 claims
- 0385US4099924AApparatus improvements for growing single crystalline silicon sheetsRCA CORP·Filed 1977·Granted Jul 11, 1978·40 cites·5 claims
- 0484US6958301B2Method for forming Ta2O5 dielectric layer by using in situ N2O plasma treatmentHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Oct 25, 2005·29 cites·10 claims
- 0583US6589886B2Method for manufacturing aluminum oxide film for use in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jul 8, 2003·32 cites·16 claims
- 0682US5942032AHeat shield assembly and method of growing vacancy rich single crystal siliconMEMC ELECTRONIC MATERIALS·Filed 1997·Granted Aug 24, 1999·57 cites·16 claims
- 0781US6537925B2Method for forming Ta2O5 dielectric layer using plasma enhanced atomic layer depositionHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Mar 25, 2003·25 cites·15 claims
- 0879US4659423ASemiconductor crystal growth via variable melt rotationIBM·Filed 1986·Granted Apr 21, 1987·28 cites·48 claims
- 0977US6673668B2Method of forming capacitor of a semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jan 6, 2004·17 cites·19 claims
- 1074US6303427B1Method of manufacturing a capacitor in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Oct 16, 2001·14 cites·6 claims
- 1173US6410381B2Method for forming capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jun 25, 2002·17 cites·19 claims
- 1270US6784100B2Capacitor with oxidation barrier layer and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Aug 31, 2004·13 cites·17 claims
- 1370US5484738AMethod of forming silicon on oxide semiconductor device structure for BiCMOS integrated circuitsIBM·Filed 1995·Granted Jan 16, 1996·34 cites·4 claims
- 1470US5061652AMethod of manufacturing a semiconductor device structure employing a multi-level epitaxial structureIBM·Filed 1990·Granted Oct 29, 1991·53 cites·11 claims
- 1569US5814148AMethod for preparing molten silicon melt from polycrystalline silicon chargeMEMC ELECTRONIC MATERIALS·Filed 1996·Granted Sep 29, 1998·24 cites·34 claims
- 1667US6355516B1Method of manufacturing a capacitor with a bi-layer Ta2O5 capacitor dielectric in a semiconductor device including performing a plasma treatment on the first Ta2O5 layerHYUNDAI ELECTRONICS IND·Filed 2000·Granted Mar 12, 2002·11 cites·17 claims
- 1766US5676751ARapid cooling of CZ silicon crystal growth systemMEMC ELECTRONIC MATERIALS·Filed 1996·Granted Oct 14, 1997·18 cites·20 claims
- 1865US6559000B2Method of manufacturing a capacitor in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted May 6, 2003·9 cites·32 claims
- 1965US5885344ANon-dash neck method for single crystal silicon growthMEMC ELECTRONIC MATERIALS·Filed 1997·Granted Mar 23, 1999·19 cites·11 claims
- 2065US5628823AProcess for eliminating dislocations in the neck of a silicon single crystalMEMC ELECTRONIC MATERIALS·Filed 1996·Granted May 13, 1997·21 cites·23 claims
- 2164US5578284ASilicon single crystal having eliminated dislocation in its neckMEMC ELECTRONIC MATERIALS·Filed 1995·Granted Nov 26, 1996·20 cites·17 claims
- 2262US7416997B2Method of fabricating semiconductor device including removing impurities from silicon nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 26, 2008·1 cites·19 claims
- 2362US6723598B2Method for manufacturing aluminum oxide films for use in semiconductor devicesHYUNDAI ELECTRONICS IND·Filed 2000·Granted Apr 20, 2004·8 cites·24 claims
- 2461US6326259B1Method of manufacturing a capacitor in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Dec 4, 2001·7 cites·2 claims
- 2561US4157373AApparatus for the production of ribbon shaped crystalsRCA CORP·Filed 1977·Granted Jun 5, 1979·14 cites·4 claims
- 2660US5331199ABipolar transistor with reduced topographyIBM·Filed 1993·Granted Jul 19, 1994·28 cites·5 claims
- 2759US5521399AAdvanced silicon on oxide semiconductor device structure for BiCMOS integrated circuitIBM·Filed 1994·Granted May 28, 1996·24 cites·16 claims
- 2858US6835658B2Method of fabricating capacitor with hafniumHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Dec 28, 2004·6 cites·10 claims
- 2953US6706607B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Mar 16, 2004·4 cites·5 claims
- 3052US4556448AMethod for controlled doping of silicon crystals by improved float zone techniqueIBM·Filed 1983·Granted Dec 3, 1985·10 cites·6 claims
- 3150US6699768B2Method for forming capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Mar 2, 2004·2 cites·12 claims
- 3250US6682974B2Fabricating capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jan 27, 2004·2 cites·17 claims
- 3350US6365487B2Method of manufacturing a capacitor in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Apr 2, 2002·2 cites·10 claims
- 3449US6607963B2Method for forming capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Aug 19, 2003·2 cites·28 claims
- 3548US5840120AApparatus for controlling nucleation of oxygen precipitates in silicon crystalsMEMC ELECTRONIC MATERIALS·Filed 1996·Granted Nov 24, 1998·10 cites·17 claims
- 3646US6794241B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Sep 21, 2004·1 cites·7 claims
- 3744US5234846AMethod of making bipolar transistor with reduced topographyIBM·Filed 1992·Granted Aug 10, 1993·15 cites·10 claims
- 3843US5229322AMethod of making low resistance substrate or buried layer contactIBM·Filed 1991·Granted Jul 20, 1993·13 cites·12 claims
- 3942US2004063275A1Capacitor of a semiconductor memory device and method of forming the semeHYNIX SEMICONDUCTOR INC·Filed 2003·Application pending·0 cites
- 4041US6329237B1Method of manufacturing a capacitor in a semiconductor device using a high dielectric tantalum oxide or barium strontium titanate material that is treated in an ozone plasmaHYUNDAI ELECTRONICS IND·Filed 1999·Granted Dec 11, 2001·8 cites·18 claims
- 4141US2006128108A1Method for forming a titanium nitride layer and method for forming a lower electrode of a MIM capacitor using the titanium nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4240US2002025649A1Method of manufacturing a capacitor in a semiconductor deviceFiled 2001·Application pending·0 cites
- 4339US6709916B2Method for forming capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Mar 23, 2004·0 cites·24 claims
- 4438US6635524B2Method for fabricating capacitor of semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Oct 21, 2003·0 cites·23 claims
- 4538US2006145233A1Method of fabricating a semiconductor device capacitor having a dielectric barrier layer and a semiconductor device capacitor having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4638US2003109110A1Method for forming capacitor of a semiconductor deviceFiled 2002·Application pending·0 cites
- 4738US2007246768A1Nonvolatile memory device and method of fabricating the sameKIM KYONG-MIN·Filed 2007·Application pending·0 cites
- 4837US6716717B2Method for fabricating capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Apr 6, 2004·0 cites·11 claims
- 4937US6653197B2Method for fabricating capacitor of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Nov 25, 2003·0 cites·15 claims
- 5037US4216186AMeans for growing ribbon crystals without subjecting the crystals to thermal shock-induced strainsNASA·Filed 1978·Granted Aug 5, 1980·3 cites·3 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →