Inventor · disambiguated record
Kyu-Hyoun Kim
Also filed as: KIM KYU-HYOUN
190 granted patents·17 pending applications·2,128 citations·filing 2000–2023
99Inventor score
Top patents by PatentIndex Score
207 records- 0198US9529543B1Concurrent upgrade and backup of non-volatile memoryIBM·Filed 2016·Granted Dec 27, 2016·41 cites·1 claims
- 0297US8516409B2Implementing vertical die stacking to distribute logical function over multiple dies in through-silicon-via stacked semiconductor deviceCOTEUS PAUL W·Filed 2010·Granted Aug 20, 2013·41 cites·4 claims
- 0396US9471423B1Selective memory error reportingIBM·Filed 2015·Granted Oct 18, 2016·25 cites·2 claims
- 0496US7948817B2Advanced memory device having reduced power and improved performanceIBM·Filed 2009·Granted May 24, 2011·51 cites·6 claims
- 0596US7085336B2Signal transmission circuit and method for equalizing disparate delay times dynamically, and data latch circuit of semiconductor device implementing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 1, 2006·82 cites·29 claims
- 0696US6535051B2Charge pump circuitSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Mar 18, 2003·78 cites·17 claims
- 0796US6466071B2Methods and circuits for correcting a duty-cycle of a signalSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 15, 2002·79 cites·30 claims
- 0896US6452432B2Signal processing circuits having a pair of delay locked loop (DLL) circuits for adjusting a duty-cycle of a periodic digital signal and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 17, 2002·121 cites·40 claims
- 0995US7612621B2System for providing open-loop quadrature clock generationIBM·Filed 2007·Granted Nov 3, 2009·29 cites·12 claims
- 1095US7199634B2Duty cycle correction circuits suitable for use in delay-locked loops and methods of correcting duty cycles of periodic signalsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 3, 2007·81 cites·5 claims
- 1195US6934215B2Semiconductor memory device having duty cycle correction circuit and interpolation circuit interpolating clock signal in the semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 23, 2005·86 cites·15 claims
- 1294US11200112B1Method and apparatus to reduce bandwidth overhead of CRC protection on a memory channelIBM·Filed 2020·Granted Dec 14, 2021·3 cites·20 claims
- 1394US9760504B2Nonvolatile memory data securityIBM·Filed 2015·Granted Sep 12, 2017·11 cites·12 claims
- 1494US9076770B2Integrated circuit die stacks having initially identical dies personalized with fuses and methods of manufacturing the sameFOSTER SR JIMMY G·Filed 2012·Granted Jul 7, 2015·15 cites·15 claims
- 1594US8659959B2Advanced memory device having improved performance, reduced power and increased reliabilityKIM KYU-HYOUN·Filed 2012·Granted Feb 25, 2014·16 cites·5 claims
- 1694US8307270B2Advanced memory device having improved performance, reduced power and increased reliabilityKIM KYU-HYOUN·Filed 2009·Granted Nov 6, 2012·27 cites·7 claims
- 1794US7015739B2Integrated circuit devices having duty cycle correction circuits that receive control signals over first and second separate paths and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 21, 2006·89 cites·17 claims
- 1893US9747148B2Error monitoring of a memory device containing embedded error correctionIBM·Filed 2017·Granted Aug 29, 2017·7 cites·9 claims
- 1993US8823162B2Integrated circuit die stacks with translationally compatible viasFOSTER SR JIMMY G·Filed 2012·Granted Sep 2, 2014·14 cites·18 claims
- 2093US8697567B2Implementing decoupling devices inside a TSV DRAM stackHENDERSON JOAB D·Filed 2012·Granted Apr 15, 2014·18 cites·10 claims
- 2193US8644085B2Duty cycle distortion correctionKIM KYU-HYOUN·Filed 2011·Granted Feb 4, 2014·26 cites·20 claims
- 2293US8432027B2Integrated circuit die stacks with rotationally symmetric viasFOSTER SR JIMMY G·Filed 2009·Granted Apr 30, 2013·25 cites·21 claims
- 2392US10606692B2Error correction potency improvement via added burst beats in a dram access cycleIBM·Filed 2017·Granted Mar 31, 2020·8 cites·14 claims
- 2492US9087612B2DRAM error detection, evaluation, and correctionIBM·Filed 2013·Granted Jul 21, 2015·14 cites·4 claims
- 2592US8258619B2Integrated circuit die stacks with translationally compatible viasFOSTER SR JIMMY G·Filed 2009·Granted Sep 4, 2012·21 cites·13 claims
- 2692US7683725B2System for generating a multiple phase clockIBM·Filed 2007·Granted Mar 23, 2010·22 cites·6 claims
- 2791US10019312B2Error monitoring of a memory device containing embedded error correctionIBM·Filed 2017·Granted Jul 10, 2018·7 cites·11 claims
- 2891US6704228B2Semiconductor memory device post-repair circuit and methodSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 9, 2004·59 cites·16 claims
- 2991US6459314B2Delay locked loop circuit having duty cycle correction function and delay locking methodSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 1, 2002·51 cites·18 claims
- 3090US8359521B2Providing a memory device having a shared error feedback pinIBM·Filed 2008·Granted Jan 22, 2013·23 cites·18 claims
- 3190US7636262B2Synchronous memory having shared CRC and strobe pinIBM·Filed 2007·Granted Dec 22, 2009·23 cites·20 claims
- 3289US8639874B2Power management of a spare DRAM on a buffered DIMM by issuing a power on/off command to the DRAM deviceMAULE WARREN EDWARD·Filed 2008·Granted Jan 28, 2014·28 cites·1 claims
- 3389US7420870B2Phase locked loop circuit and method of locking a phaseSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 2, 2008·22 cites·27 claims
- 3489US6366148B1Delay locked loop circuit and method for generating internal clock signalSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 2, 2002·53 cites·20 claims
- 3588US9898218B2Memory system with switchable operating bandsIBM·Filed 2016·Granted Feb 20, 2018·5 cites·19 claims
- 3688US9875036B2Concurrent upgrade and backup of non-volatile memoryIBM·Filed 2017·Granted Jan 23, 2018·6 cites·1 claims
- 3788US9442512B1Interface clock frequency switching using a computed insertion delayIBM·Filed 2015·Granted Sep 13, 2016·6 cites·17 claims
- 3888US7598762B2Semiconductor driver circuit with signal swing balance and enhanced testingSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 6, 2009·22 cites·17 claims
- 3988US7184509B2Delay locked loop circuit for internally correcting duty cycle and duty cycle correction method thereofSAMSUNG ELCTRONICS CO LTD·Filed 2003·Granted Feb 27, 2007·44 cites·18 claims
- 4088US6388485B2Delay-locked loop circuit having master-slave structureSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 14, 2002·41 cites·8 claims
- 4187US9606851B2Error monitoring of a memory device containing embedded error correctionIBM·Filed 2015·Granted Mar 28, 2017·4 cites·15 claims
- 4287US9298395B2Memory system connectorIBM·Filed 2012·Granted Mar 29, 2016·10 cites·17 claims
- 4387US8890316B2Implementing decoupling devices inside a TSV DRAM stackIBM·Filed 2014·Granted Nov 18, 2014·7 cites·9 claims
- 4487US8343804B2Implementing multiple different types of dies for memory stackingIBM·Filed 2012·Granted Jan 1, 2013·7 cites·13 claims
- 4586US9940457B2Detecting a cryogenic attack on a memory device with embedded error correctionIBM·Filed 2015·Granted Apr 10, 2018·5 cites·17 claims
- 4686US9626242B2Memory device error history bitIBM·Filed 2015·Granted Apr 18, 2017·4 cites·9 claims
- 4786US7528668B2Differential amplifier, differential amplifying method, and phase locked loop and delay locked loop using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 5, 2009·15 cites·24 claims
- 4886US7522440B2Data input and data output control device and methodSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 21, 2009·20 cites·24 claims
- 4985US9690649B2Memory device error history bitIBM·Filed 2015·Granted Jun 27, 2017·4 cites·12 claims
- 5085US8004335B2Phase interpolator system and associated methodsIBM·Filed 2008·Granted Aug 23, 2011·13 cites·16 claims
Showing the top 50 of 207 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →