Inventor · disambiguated record
Kyu-Chan Lee
Also filed as: LEE KYU-CHAN
40 granted patents·2 pending applications·687 citations·filing 1991–2017
98Inventor score
Top patents by PatentIndex Score
42 records- 0193US7515487B2Internal reference voltage generating circuit for reducing standby current and semiconductor memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 7, 2009·31 cites·10 claims
- 0291US5701268ASense amplifier for integrated circuit memory devices having boosted sense and current drive capability and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 23, 1997·91 cites·17 claims
- 0390US7646653B2Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 12, 2010·23 cites·15 claims
- 0484US6678206B2Semiconductor memory device including standby mode for reducing current consumption of delay locked loopSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 13, 2004·31 cites·20 claims
- 0584US6025621AIntegrated circuit memory devices having independently biased sub-well regions therein and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Feb 15, 2000·53 cites·8 claims
- 0683US9980682B2Curved movable beam stop array and CBCT comprising thereofGIL MEDICAL CT·Filed 2014·Granted May 29, 2018·9 cites·10 claims
- 0781US7768853B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 3, 2010·10 cites·22 claims
- 0881US5761138AMemory devices having a flexible redundant block architectureSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jun 2, 1998·51 cites·12 claims
- 0978US6930948B2Semiconductor memory device having an internal voltage generation circuit for selectively generating an internal voltage according to an external voltage levelSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 16, 2005·27 cites·11 claims
- 1078US5703475AReference voltage generator with fast start-up and low stand-by powerSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 30, 1997·33 cites·19 claims
- 1177US8456397B2Apparatus and method for calibrating grayscale data using an overdrive method, pre-tilt method, and an undershoot methodKIM SUNG-SOO·Filed 2009·Granted Jun 4, 2013·3 cites·20 claims
- 1276US5349556ARow redundancy circuit sharing a fuse boxSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Sep 20, 1994·39 cites·12 claims
- 1374US8322922B2Method of outputting temperature data in semiconductor device and temperature data output circuit thereforLEE YUN-YOUNG·Filed 2009·Granted Dec 4, 2012·10 cites·8 claims
- 1473US7576575B2Reset signal generator in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 18, 2009·2 cites·18 claims
- 1573US6269046B1Semiconductor memory device having improved decoders for decoding row and column address signalsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 31, 2001·22 cites·19 claims
- 1673US5761135ASub-word line drivers for integrated circuit memory devices and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jun 2, 1998·33 cites·22 claims
- 1771US7486576B2Methods and devices for preventing data stored in memory from being read outSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 3, 2009·6 cites·5 claims
- 1870US9036406B2Magneto-resistive memory device including source line voltage generatorKIM HYE-JIN·Filed 2013·Granted May 19, 2015·4 cites·23 claims
- 1970US6028776APower factor correction converterSAMSUNG ELECTRO MECH·Filed 1997·Granted Feb 22, 2000·50 cites·3 claims
- 2067US10297228B2Display apparatus and control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 21, 2019·1 cites·20 claims
- 2165US5654928ACurrent sense amplifier for use in a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Aug 5, 1997·24 cites·13 claims
- 2263US7869239B2Layout structure of bit line sense amplifiers for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 11, 2011·4 cites·15 claims
- 2363US5657282ASemiconductor memory device with stress circuit and method for supplying a stress voltage thereofSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Aug 12, 1997·22 cites·20 claims
- 2462US7782688B2Semiconductor memory device and test method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 24, 2010·2 cites·22 claims
- 2560US9117386B2Method for driving display panel and display apparatus applying the sameLIM SUNG-JIN·Filed 2012·Granted Aug 25, 2015·1 cites·21 claims
- 2659US5949697ASemiconductor memory device having hierarchical input/output line structure and method for arranging the sameSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Sep 7, 1999·18 cites·9 claims
- 2752US6891767B2Semiconductor memory device and method for pre-charging the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 10, 2005·7 cites·16 claims
- 2852US6233196B1Multi-bank integrated circuit memory devices with diagonal pairs of sub-banksSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted May 15, 2001·13 cites·19 claims
- 2952US6175263B1Back bias generator having transfer transistor with well biasSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 16, 2001·14 cites·20 claims
- 3051US7260002B2Methods and devices for preventing data stored in memory from being read outSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 21, 2007·5 cites·10 claims
- 3150US8310853B2Layout structure of bit line sense amplifiers for a semiconductor memory deviceMIN YOUNG-SUN·Filed 2011·Granted Nov 13, 2012·1 cites·23 claims
- 3249US5892386AInternal power control circuit for a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 6, 1999·12 cites·26 claims
- 3348US2015121109A1Voltage regulator and semiconductor memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 3446US6323702B1Integrated circuit devices having circuits therein for driving large signal line loadsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 27, 2001·0 cites·4 claims
- 3546US5757716AIntegrated circuit memory devices and methods including programmable block disabling and programmable block selectionSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 26, 1998·10 cites·13 claims
- 3645US6005825ASynchronous semiconductor memory device having wave pipelining control structure and method for outputting data using the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Dec 21, 1999·9 cites·16 claims
- 3743US5146110ASemiconductor memory with substrate voltage generating circuit for removing unwanted substrate current during precharge cycle memory mode of operationSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Sep 8, 1992·9 cites·3 claims
- 3840US2013094754A1Image output apparatus and method for outputting image thereofLEE KYU-CHAN·Filed 2012·Application pending·0 cites
- 3938US7110271B2Inrush current prevention circuit for DC-DC converterHYUNDAI MOTOR CO LTD·Filed 2004·Granted Sep 19, 2006·3 cites·3 claims
- 4034US5770957ASignal generator for generating sense amplifier enable signalSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jun 23, 1998·3 cites·12 claims
- 4133US6909654B2Bit line pre-charge circuit of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 21, 2005·0 cites·18 claims
- 4231US6215715B1Integrated circuit memories including fuses between a decoder and a memory array for disabling defective storage cells in the memory arraySAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 10, 2001·1 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →