Inventor · disambiguated record
Kyu-Hyun Lee
Also filed as: LEE KYU-HYUN
29 granted patents·10 pending applications·460 citations·filing 1997–2022
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD19FAIRCHILD KR SEMICONDUCTOR LTD4FAIRCHILD KOREA SEMICONDUCTOR LTD3GREEN CROSS CORP2SEMICONDUCTOR COMPONENTS IND LLC2
Top patents by PatentIndex Score
39 records- 0191US5990998AActive matrix liquid crystal display and related methodLG ELECTRONICS INC·Filed 1997·Granted Nov 23, 1999·126 cites·26 claims
- 0287US6451651B1Method of manufacturing DRAM device inventionSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 17, 2002·44 cites·8 claims
- 0386US9685335B2Power device including a field stop layerFAIRCHILD KOREA SEMICONDUCTOR LTD·Filed 2014·Granted Jun 20, 2017·6 cites·18 claims
- 0486US6607983B1Method of processing a defect source at a wafer edge region in a semiconductor manufacturingSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Aug 19, 2003·44 cites·20 claims
- 0584US7645659B2Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2005·Granted Jan 12, 2010·17 cites·9 claims
- 0683US6262470B1Trench-type insulated gate bipolar transistor and method for making the sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jul 17, 2001·55 cites·3 claims
- 0780US6607955B2Method of forming self-aligned contacts in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 19, 2003·25 cites·26 claims
- 0876US8729675B1Semiconductor device having line-type trench to define active region and method of forming the sameCHOI JAY-BOK·Filed 2013·Granted May 20, 2014·6 cites·25 claims
- 0975US10109719B2Power device and fabricating method thereofFAIRCHILD KOREA SEMICONDUCTOR LTD·Filed 2017·Granted Oct 23, 2018·2 cites·19 claims
- 1072US7153727B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 26, 2006·13 cites·5 claims
- 1172US6432795B1Method of fabricating a cylindrical capacitor storage node having HSG silicon on inner wall thereof in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Aug 13, 2002·18 cites·23 claims
- 1270US11715760B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 1, 2023·0 cites·20 claims
- 1369US6168992B1Methods for forming electrodes including sacrificial layersSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 2, 2001·29 cites·29 claims
- 1466US6890841B2Methods of forming integrated circuit memory devices that include a plurality of landing pad holes that are arranged in a staggered pattern and integrated circuit memory devices formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 10, 2005·14 cites·24 claims
- 1563US6518624B2Trench-gate power semiconductor device preventing latch-up and method for fabricating the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2000·Granted Feb 11, 2003·13 cites·6 claims
- 1661US6602773B2Methods of fabricating semiconductor devices having protected plug contacts and upper interconnectionsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 5, 2003·11 cites·18 claims
- 1761US2020093899A1Hunter syndrome therapeutic agent and treatment methodGREEN CROSS CORP·Filed 2019·Application pending·0 cites
- 1860US11239311B2Semiconductor device and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·19 claims
- 1957US6485743B1Method and composition of an oral preparation of itraconazoleCHOONGWAE PHARMA CORP·Filed 1998·Granted Nov 26, 2002·15 cites·4 claims
- 2056US10561713B2Hunter syndrome therapeutic agent and treatment methodGREEN CROSS CORP·Filed 2016·Granted Feb 18, 2020·0 cites·7 claims
- 2155US10707321B2Power device with multiple field stop layersSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jul 7, 2020·0 cites·20 claims
- 2254US11696436B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 4, 2023·0 cites·16 claims
- 2354US2005226924A1Composition comprising itraconazole for oral administrationLEE KYU-HYUN·Filed 2004·Application pending·0 cites
- 2453US9960250B2Power device and method of manufacturing the sameFAIRCHILD KOREA SEMICONDUCTOR LTD·Filed 2017·Granted May 1, 2018·0 cites·20 claims
- 2550US6730975B2DRAM deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 4, 2004·3 cites·4 claims
- 2650US2022207393A1Method of predicting semiconductor material properties and method of testing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 2749US2003207946A1Novel parenteral composition comprising propofolFDL INC·Filed 2002·Application pending·0 cites
- 2849US2006261392A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2948US11201144B2Electrostatic discharge handling for sense IGBT using Zener diodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Dec 14, 2021·0 cites·11 claims
- 3048US9443734B2Semiconductor memory devices and manufacturing methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 13, 2016·0 cites·12 claims
- 3148US6337275B1Method for forming a self aligned contact in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 8, 2002·14 cites·8 claims
- 3247US2013277793A1Power device and fabricating method thereofFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2013·Application pending·0 cites
- 3344US12097033B2Methods and systems for electrode poolingCALIFORNIA INST OF TECHN·Filed 2020·Granted Sep 24, 2024·0 cites·25 claims
- 3443US6777812B2Semiconductor devices having protected plug contacts and upper interconnectionsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 17, 2004·2 cites·14 claims
- 3543US2015001578A1Power semiconductor device and method of manufacturing the sameFAIRCHILD KR SEMICONDUCTOR LTD·Filed 2014·Application pending·0 cites
- 3643US2007004129A1Semiconductor device having finfet and method of fabricating the sameLEE JU-YONG·Filed 2006·Application pending·0 cites
- 3736US2007029597A1High-voltage semiconductor deviceLEE JAE-GIL·Filed 2006·Application pending·0 cites
- 3833US6235623B1Methods of forming integrated circuit contact holes using blocking layer patternsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 22, 2001·3 cites·24 claims
- 3931US2003057478A1Mos-gated power semiconductor deviceFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →