Inventor · disambiguated record
Kyeongseok Park
Also filed as: PARK KYEONGSEOK
6 granted patents·7 pending applications·1 citations·filing 2018–2024
69Inventor score
Top patents by PatentIndex Score
13 records- 0176US12501649B2Power device with graded channelSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
- 0268US11398437B2Power device including metal layerSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Jul 26, 2022·1 cites·20 claims
- 0364US12125884B2MOSFET device with undulating channelSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Oct 22, 2024·0 cites·19 claims
- 0464US2022359426A1Power device including metal layerSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Application pending·0 cites
- 0563US2025204818A1Applicator and applicator assemblyI SENS INC·Filed 2024·Application pending·0 cites
- 0663US2025204817A1Applicator and applicator assemblyI SENS INC·Filed 2024·Application pending·0 cites
- 0761US11605732B2Power device with graded channelSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Mar 14, 2023·0 cites·18 claims
- 0855US11658214B2MOSFET device with undulating channelSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted May 23, 2023·0 cites·16 claims
- 0955US2025338632A1Switching device with passive overcurrent protectionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 1050US2023378273A1Silicon carbide trench power deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Application pending·0 cites
- 1145US10629686B2Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Apr 21, 2020·0 cites·20 claims
- 1243US2023282693A1Trench channel semiconductor devices and related methodsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Application pending·0 cites
- 1337US2021050420A1Silicon carbide trench power deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →