Inventor · disambiguated record
Kyoung Wan Park
Also filed as: PARK KYOUNG-WAN
26 granted patents·5 pending applications·323 citations·filing 1994–2024
96Inventor score
Top patents by PatentIndex Score
31 records- 0191US6770534B2Ultra small size vertical MOSFET device and method for the manufacture thereofKOREA ELECTRONICS TELECOMM·Filed 2003·Granted Aug 3, 2004·64 cites·11 claims
- 0286US6638823B2Ultra small size vertical MOSFET device and method for the manufacture thereofKOREA ELECTRONICS TELECOMM·Filed 2001·Granted Oct 28, 2003·38 cites·7 claims
- 0383US2025006919A1Positive Electrode Active Material Precursor and Preparation Method of Positive Electrode Active Material PrecursorLG CHEMICAL LTD·Filed 2024·Application pending·0 cites
- 0481US5883419AUltra-thin MO-C film transistorKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Mar 16, 1999·40 cites·5 claims
- 0580US12327869B2Positive electrode active material precursor for lithium secondary battery, and method of preparing the sameLG CHEMICAL LTD·Filed 2024·Granted Jun 10, 2025·0 cites·8 claims
- 0678US12427461B2Apparatus and method for cleaning metal filterLG CHEMICAL LTD·Filed 2024·Granted Sep 30, 2025·0 cites·6 claims
- 0777US6723587B2Ultra small-sized SOI MOSFET and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Apr 20, 2004·24 cites·7 claims
- 0873US12119491B2Positive electrode active material precursor and preparation method of positive electrode active material precursorLG CHEMICAL LTD·Filed 2021·Granted Oct 15, 2024·0 cites·9 claims
- 0972US6841082B2Method of manufacturing Er-doped silicon nano-dot array and laser ablation appparatus used thereinKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Jan 11, 2005·10 cites·9 claims
- 1071US6323504B1Single-electron memory device using an electron-hole coulomb blockadeKOREA ELECTRONICS TELECOMM·Filed 2000·Granted Nov 27, 2001·17 cites·5 claims
- 1170US5872372AThin film transistor with piezoelectric filmKOREA ELECTRONICS TELECOMM·Filed 1996·Granted Feb 16, 1999·28 cites·10 claims
- 1269US12064742B2Apparatus and method for producing positive electrode active material precursorLG CHEMICAL LTD·Filed 2019·Granted Aug 20, 2024·0 cites·12 claims
- 1367US6242326B1Method for fabricating compound semiconductor substrate having quantum dot array structureKOREA ELECTRONICS TELECOMM·Filed 1999·Granted Jun 5, 2001·35 cites·8 claims
- 1465US12064720B2Apparatus and method for cleaning metal filterLG CHEMICAL LTD·Filed 2019·Granted Aug 20, 2024·0 cites·8 claims
- 1565US6620668B2Method of fabricating MOS transistor having shallow source/drain junction regionsKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Sep 16, 2003·10 cites·28 claims
- 1664US5760675APiezoresistive device and fabrication method thereofKOREA ELECTRONICS TELECOMM·Filed 1996·Granted Jun 2, 1998·24 cites·3 claims
- 1759US6693294B1Schottky barrier tunnel transistor using thin silicon layer on insulator and method for fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Feb 17, 2004·8 cites·15 claims
- 1856US10710048B2Co-precipitation reactorLG CHEMICAL LTD·Filed 2018·Granted Jul 14, 2020·0 cites·19 claims
- 1951US11973222B2Positive electrode active material precursor for lithium secondary battery, and method of preparing the sameLG CHEMICAL LTD·Filed 2018·Granted Apr 30, 2024·0 cites·6 claims
- 2049US11996538B2Method for preparing positive electrode active material precursor for lithium secondary batteryLG CHEMICAL LTD·Filed 2019·Granted May 28, 2024·0 cites·14 claims
- 2149US6489587B2Fabrication method of erbium-doped silicon nano-size dotsKOREA ELECTRONICS TELECOMM·Filed 2000·Granted Dec 3, 2002·2 cites·11 claims
- 2249US2005061235A1Method of manufacturing Er-doped silicon nano-dot array and laser ablation apparatus used thereinFiled 2004·Application pending·0 cites
- 2348US5880484ALateral resonant tunneling transistor having two non-symmetric quantum dotsKOREA ELECTRONICS TELECOMM·Filed 1996·Granted Mar 9, 1999·11 cites·9 claims
- 2447US2016314988A1Substrate heat treatment apparatus and methodSAMSUNG DISPLAY CO LTD·Filed 2016·Application pending·0 cites
- 2545US2014242530A1Substrate heat treatment apparatus and methodAN SUNG GUK·Filed 2013·Application pending·0 cites
- 2638US6037198AMethod of fabricating SOI waferKOREA ELECTRONICS TELECOMM·Filed 1998·Granted Mar 14, 2000·7 cites·2 claims
- 2737US6797629B2Method of manufacturing nano transistorsKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Sep 28, 2004·0 cites·11 claims
- 2837US5519232AQuantum interference deviceKOREA ELECTRONICS TELECOMM·Filed 1994·Granted May 21, 1996·5 cites·2 claims
- 2936US2003082922A1Method of fabricating integrated circuit having shallow junctionFiled 2001·Application pending·0 cites
- 3030US5994714AQuantum diffraction transistorKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Nov 30, 1999·0 cites·3 claims
- 3130US5940696AMethod of manufacturing a quantum diffraction transistorKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Aug 17, 1999·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →