Inventor · disambiguated record
Kyeong-Man Ra
Also filed as: RA KYEONG-MAN
15 granted patents·225 citations·filing 1996–2001
94Inventor score
Top patents by PatentIndex Score
15 records- 0181US6121072AMethod of fabricating nonvolatile memory deviceLG SEMICON CO LTD·Filed 1998·Granted Sep 19, 2000·43 cites·33 claims
- 0278US6278634B1Reference memory cell initialization circuit and methodHYUNDAI ELECTRONICS IND·Filed 2000·Granted Aug 21, 2001·28 cites·22 claims
- 0369US6269022B1Threshold voltage setting circuit for reference memory cell and method for setting threshold voltage using the sameHYUNDAI ELECTRONICS IND·Filed 1999·Granted Jul 31, 2001·29 cites·8 claims
- 0461US5859454ANonvolatile memory deviceLG SEMICON CO LTD·Filed 1997·Granted Jan 12, 1999·20 cites·9 claims
- 0559US6480018B2Charge gain stress test circuit for nonvolatile memory and test method using the sameHYUNDAI ELECTRONICS IND·Filed 2001·Granted Nov 12, 2002·9 cites·13 claims
- 0659US6335553B1Nonvolatile semiconductor memory and method of fabricationLG SEMICON CO LTD·Filed 2000·Granted Jan 1, 2002·6 cites·20 claims
- 0759US6037226AMethod of making contactless nonvolatile semiconductor memory with asymmetrical floating gateLG SEMICON CO LTD·Filed 1998·Granted Mar 14, 2000·15 cites·22 claims
- 0858US5751632ADevice for and method of sensing data of multi-bit memory cellLG SEMICON CO LTD·Filed 1997·Granted May 12, 1998·21 cites·10 claims
- 0953US5998829ANon-volatile memory device incorporating a dual channel structureLG SEMICON CO LTD·Filed 1997·Granted Dec 7, 1999·12 cites·24 claims
- 1050US6335243B1Method of fabricating nonvolatile memory deviceLG SEMICON CO LTD·Filed 1998·Granted Jan 1, 2002·11 cites·25 claims
- 1148US5777359ASemiconductor flash memory device and fabrication method of sameLG SEMICON CO LTD·Filed 1996·Granted Jul 7, 1998·12 cites·8 claims
- 1244US6323671B1Charge gain stress test circuit for nonvolatile memory and test method using the sameHYUNDAI ELECTRONICS IND·Filed 1999·Granted Nov 27, 2001·8 cites·7 claims
- 1342US6038175AErase verifying apparatus in serial flash memory having redundancy and method thereofLG SEMICON CO LTD·Filed 1999·Granted Mar 14, 2000·8 cites·20 claims
- 1433US6087223AMethod of fabricating flash memory with dissymmetrical floating gateLG SEMICON CO LTD·Filed 1998·Granted Jul 11, 2000·3 cites·8 claims
- 1530US6146943AMethod for fabricating nonvolatile memory deviceHYUNDAI ELECTRONICS IND·Filed 1998·Granted Nov 14, 2000·0 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →