Inventor · disambiguated record
Kyoung Bong Rouh
Also filed as: ROUH KYOUNG B · ROUH KYOUNG BONG
34 granted patents·5 pending applications·184 citations·filing 2004–2013
96Inventor score
Top patents by PatentIndex Score
39 records- 0197US7470593B2Method for manufacturing a cell transistor of a semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Dec 30, 2008·94 cites·6 claims
- 0290US7824975B2Method of fabricating semiconductor device having gate spacer layer with uniform thicknessHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Nov 2, 2010·21 cites·3 claims
- 0384US7511337B2Recess gate type transistorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 31, 2009·8 cites·3 claims
- 0482US8110501B2Method of fabricating landing plug with varied doping concentration in semiconductor deviceROUH KYOUNG BONG·Filed 2010·Granted Feb 7, 2012·5 cites·6 claims
- 0582US7687852B2Recess gate type transistorHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Mar 30, 2010·6 cites·2 claims
- 0681US7955074B2Apparatus and method for thermally treating semiconductor device capable of preventing wafer from warpingHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jun 7, 2011·7 cites·2 claims
- 0777US7935591B2Method for fabricating PMOS transistor and method for forming dual gate using the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted May 3, 2011·6 cites·6 claims
- 0875US7332772B2Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Feb 19, 2008·7 cites·8 claims
- 0973US7365406B2Non-uniform ion implantation apparatus and method thereofHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Apr 29, 2008·3 cites·15 claims
- 1072US7662705B2Partial implantation method for semiconductor manufacturingHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Feb 16, 2010·3 cites·10 claims
- 1172US7576339B2Ion implantation apparatus and method for obtaining non-uniform ion implantation energyHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Aug 18, 2009·5 cites·11 claims
- 1268US8343859B2Non-uniform ion implantation apparatus and method thereofHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jan 1, 2013·2 cites·18 claims
- 1366US7488959B2Apparatus and method for partial ion implantationHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Feb 10, 2009·2 cites·16 claims
- 1464US7678653B2Method of fabricating a recess gate type transistorHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Mar 16, 2010·1 cites·7 claims
- 1563US7790551B2Method for fabricating a transistor having a recess gate structureHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Sep 7, 2010·1 cites·5 claims
- 1662US8222101B2Method of fabricating a MOS transistor having a gate insulation layer with a lateral portion and a vertical portionROUH KYOUNG-BONG·Filed 2007·Granted Jul 17, 2012·2 cites·9 claims
- 1761US7351627B2Method of manufacturing semiconductor device using gate-through ion implantationHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Apr 1, 2008·1 cites·5 claims
- 1859US7825015B2Method for implanting ions in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Nov 2, 2010·5 cites·9 claims
- 1957US7939418B2Partial implantation method for semiconductor manufacturingHYNIX SEMICONDUCTOR INC·Filed 2009·Granted May 10, 2011·0 cites·7 claims
- 2054US7968857B2Apparatus and method for partial ion implantation using atom vibrationHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 28, 2011·0 cites·16 claims
- 2152US8003501B2Method of doping P-type impurity ions in dual poly gate and method of forming dual poly gate using the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Aug 23, 2011·0 cites·9 claims
- 2252US7052981B2Ion implantation methodHYNIX SEMICONDUCTOR INC·Filed 2004·Granted May 30, 2006·3 cites·15 claims
- 2351US7700442B2Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Apr 20, 2010·0 cites·7 claims
- 2450US8324099B2Method of fabricating a landing plug in a semiconductor deviceROUH KYOUNG BONG·Filed 2012·Granted Dec 4, 2012·0 cites·6 claims
- 2550US7279691B2Ion implantation apparatus and method for implanting ions by using the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Oct 9, 2007·2 cites·16 claims
- 2649US8803224B2MOS transistor suppressing short channel effect and method of fabricating the sameROUH KYOUNG BONG·Filed 2012·Granted Aug 12, 2014·0 cites·12 claims
- 2749US7947559B2Method of fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted May 24, 2011·0 cites·12 claims
- 2849US2010285642A1Method of Doping Impurity Ions in Dual Gate and Method of Fabricating the Dual Gate using the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Application pending·0 cites
- 2949US2007120182A1Transistor having recess gate structure and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 3048US8703564B2Method for manufacturing a transistor for preventing or reducing short channel effectSK HYNIX INC·Filed 2013·Granted Apr 22, 2014·0 cites·8 claims
- 3147US7785945B2Method for fabricating PMOS transistorHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Aug 31, 2010·0 cites·17 claims
- 3246US2010117131A1Transistor for Preventing or Reducing Short Channel Effect and Method for Manufacturing the SameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 3345US7554106B2Partial ion implantation apparatus and method using bundled beamHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jun 30, 2009·0 cites·15 claims
- 3445US7538003B2Method for fabricating MOS transistorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted May 26, 2009·0 cites·5 claims
- 3545US7186631B2Method for manufacturing a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Mar 6, 2007·0 cites·13 claims
- 3641US7687350B2Method for manufacturing semiconductor memory device using asymmetric junction ion implantationHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 30, 2010·0 cites·8 claims
- 3739US2005136628A1Method for implanting ions in semiconductor process and method for fabricating semiconductor device using the sameFiled 2004·Application pending·0 cites
- 3838US8951857B2Method for implanting ions in semiconductor deviceSOHN YOUNG-SUN·Filed 2010·Granted Feb 10, 2015·0 cites·20 claims
- 3938US2006264013A1Method for implanting ions to a wafer for manufacturing of semiconductor device and method of fabricating graded junction using the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →