Inventor · disambiguated record
Kyoung-Ryul Yoon
Also filed as: YOON KYOUNG-RYUL
15 granted patents·8 pending applications·86 citations·filing 2005–2022
91Inventor score
Top patents by PatentIndex Score
23 records- 0194US11723186B2Memory cell and memory device with the sameSK HYNIX INC·Filed 2021·Granted Aug 8, 2023·4 cites·24 claims
- 0294US7646056B2Gate structures of a non-volatile memory device and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 12, 2010·39 cites·10 claims
- 0385US7279392B2Thin film structure, capacitor, and methods for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 9, 2007·6 cites·37 claims
- 0484US11469310B2Semiconductor deviceSK HYNIX INC·Filed 2020·Granted Oct 11, 2022·1 cites·18 claims
- 0582US8012823B2Methods of fabricating stack type capacitors of semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·8 cites·19 claims
- 0682US7514315B2Methods of forming capacitor structures having aluminum oxide diffusion barriersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 7, 2009·8 cites·8 claims
- 0781US7425493B2Methods of forming dielectric structures and capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 16, 2008·8 cites·37 claims
- 0876US7838438B2Dielectric layer, method of manufacturing the dielectric layer and method of manufacturing capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 23, 2010·5 cites·16 claims
- 0974US7402491B2Methods of manufacturing a semiconductor device including a dielectric layer including zirconiumSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 22, 2008·4 cites·15 claims
- 1068US2022416055A1Semiconductor deviceSK HYNIX INC·Filed 2022·Application pending·0 cites
- 1163US7560349B2Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 14, 2009·1 cites·15 claims
- 1261US8772167B2Method of forming a semiconductor memory deviceSEO JUNGWOO·Filed 2012·Granted Jul 8, 2014·1 cites·20 claims
- 1358US7888727B2Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 15, 2011·0 cites·11 claims
- 1451US8481398B2Method of forming semiconductor device having a capacitorCHUNG SEUNG-SIK·Filed 2010·Granted Jul 9, 2013·1 cites·20 claims
- 1550US2009195962A1Multilayer electrode structures including capacitor structures having aluminum oxide diffusion barriersSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 1648US2009258470A1Method of Manufacturing a Semiconductor Device Using an Atomic Layer Deposition ProcessSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 1746US7566608B2Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 28, 2009·0 cites·31 claims
- 1845US2009309187A1Semiconductor Device and Method of Fabricating the SameCHOI JAE-HYOUNG·Filed 2009·Application pending·0 cites
- 1944US2007098892A1Method of forming a layer and method of manufacturing a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2043US2006240679A1Method of manufacturing semiconductor device having reaction barrier layerLEE SEUNG-HWAN·Filed 2006·Application pending·0 cites
- 2143US2007032013A1Methods of forming a metal oxide layer including zirconium oxide and methods of forming a capacitor for semiconductor devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2241US9793133B2Methods of forming semiconductor device including capacitors with modified sidewalls and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 17, 2017·0 cites·15 claims
- 2340US2007236863A1Capacitors and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Kyoung-Ryul Yoon files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →