Inventor · disambiguated record
Lawrence N. Brigham
Also filed as: BRIGHAM JR LAWRENCE N · BRIGHAM LAWRENCE · BRIGHAM LAWRENCE N
12 granted patents·684 citations·filing 1990–2001
94Inventor score
Files withINTEL CORP12
Top patents by PatentIndex Score
12 records- 0193US6121100AMethod of fabricating a MOS transistor with a raised source/drain extensionINTEL CORP·Filed 1997·Granted Sep 19, 2000·147 cites·12 claims
- 0293US5714413AMethod of making a transistor having a deposited dual-layer spacer structureINTEL CORP·Filed 1995·Granted Feb 3, 1998·117 cites·23 claims
- 0386US5891809AManufacturable dielectric formed using multiple oxidation and anneal stepsINTEL CORP·Filed 1995·Granted Apr 6, 1999·92 cites·38 claims
- 0484US5633202AHigh tensile nitride layerINTEL CORP·Filed 1996·Granted May 27, 1997·65 cites·11 claims
- 0583US6274913B1Shielded channel transistor structure with embedded source/drain junctionsINTEL CORP·Filed 1998·Granted Aug 14, 2001·62 cites·9 claims
- 0683US6046494AHigh tensile nitride layerINTEL CORP·Filed 1997·Granted Apr 4, 2000·62 cites·12 claims
- 0782US6380010B2Shielded channel transistor structure with embedded source/drain junctionsINTEL CORP·Filed 2001·Granted Apr 30, 2002·30 cites·8 claims
- 0867US5091332ASemiconductor field oxidation processINTEL CORP·Filed 1990·Granted Feb 25, 1992·50 cites·12 claims
- 0959US5911111APolysilicon polish for patterning improvementINTEL CORP·Filed 1997·Granted Jun 8, 1999·18 cites·12 claims
- 1055US6017819AMethod for forming a polysilicon/amorphous silicon composite gate electrodeINTEL CORP·Filed 1997·Granted Jan 25, 2000·18 cites·15 claims
- 1153US6703672B1Polysilicon/amorphous silicon composite gate electrodeINTEL CORP·Filed 1997·Granted Mar 9, 2004·16 cites·25 claims
- 1242US6720631B2Transistor having a deposited dual-layer spacer structureINTEL CORP·Filed 1997·Granted Apr 13, 2004·7 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →