Inventor · disambiguated record
Larry Buffle
Also filed as: BUFFLE LARRY
7 granted patents·6 pending applications·2 citations·filing 2020–2025
71Inventor score
Files withMURATA MANUFACTURING CO13
Top patents by PatentIndex Score
13 records- 0188US11955568B2Trench capacitor structure with hybrid filling layerMURATA MANUFACTURING CO·Filed 2022·Granted Apr 9, 2024·2 cites·10 claims
- 0271US12302589B2Trench capacitor structure with hybrid filling layerMURATA MANUFACTURING CO·Filed 2024·Granted May 13, 2025·0 cites·7 claims
- 0368US2025253266A1Semiconductor structure with crack-blocking three-dimensional structureMURATA MANUFACTURING CO·Filed 2025·Application pending·0 cites
- 0465US12347790B2Semiconductor structure with crack-blocking three-dimensional structureMURATA MANUFACTURING CO·Filed 2022·Granted Jul 1, 2025·0 cites·10 claims
- 0565US2025287620A1Electrical device for high voltage applicationsMURATA MANUFACTURING CO·Filed 2025·Application pending·0 cites
- 0664US2025285807A1Electrical device comprising a capacitor with an improved dielectric structureMURATA MANUFACTURING CO·Filed 2025·Application pending·0 cites
- 0757US12402333B2Electronic component comprising a 3D capacitive structureMURATA MANUFACTURING CO·Filed 2022·Granted Aug 26, 2025·0 cites·13 claims
- 0857US12336293B2Semiconductor structure with selective bottom terminal contactingMURATA MANUFACTURING CO·Filed 2022·Granted Jun 17, 2025·0 cites·14 claims
- 0956US12381041B2Electrical device comprising a capacitor wherein the dielectric comprises anodic porous oxide, and the corresponding manufacturing methodMURATA MANUFACTURING CO·Filed 2023·Granted Aug 5, 2025·0 cites·13 claims
- 1052US2025331205A1Method of forming a capacitor or an ionic capacitor, with an electrode comprising a noble metalMURATA MANUFACTURING CO·Filed 2025·Application pending·0 cites
- 1151US2024274654A1Electrical device comprising a monolithic diamond region comprising a capacitorMURATA MANUFACTURING CO·Filed 2024·Application pending·0 cites
- 1251US2025331206A1Energy storage component comprising a capacitor or an ionic capacitor, with a buffer layer in a peripheral regionMURATA MANUFACTURING CO·Filed 2025·Application pending·0 cites
- 1348US12477758B2Semiconductor structure enhanced for high voltage applicationsMURATA MANUFACTURING CO·Filed 2020·Granted Nov 18, 2025·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →