Inventor · disambiguated record
Lawrence A. Goodman
Also filed as: GOODMAN LAWRENCE A · GOODMAN LAWRENCE ALAN
23 granted patents·2 pending applications·610 citations·filing 1975–2024
97Inventor score
Files withRCA CORP14SARNOFF CORP5GEN ELECTRIC3IDEAL SEMICONDUCTOR DEVICES INC1STANFORD RES INST INT1
Top patents by PatentIndex Score
25 records- 0194US4587713AMethod for making vertical MOSFET with reduced bipolar effectsRCA CORP·Filed 1984·Granted May 13, 1986·80 cites·7 claims
- 0293US4837606AVertical MOSFET with reduced bipolar effectsGEN ELECTRIC·Filed 1987·Granted Jun 6, 1989·88 cites·5 claims
- 0392US4366495AVertical MOSFET with reduced turn-on resistanceRCA CORP·Filed 1979·Granted Dec 28, 1982·64 cites·9 claims
- 0484US4598249AMethod using surface photovoltage (SPV) measurements for revealing heavy metal contamination of semiconductor materialRCA CORP·Filed 1984·Granted Jul 1, 1986·42 cites·18 claims
- 0581US4204217ATransistor using liquid crystalRCA CORP·Filed 1978·Granted May 20, 1980·23 cites·11 claims
- 0676US4126384ASelf-illuminated liquid crystal display deviceRCA CORP·Filed 1976·Granted Nov 21, 1978·26 cites·8 claims
- 0772US6181008B1Integrated circuit power supplySARNOFF CORP·Filed 1999·Granted Jan 30, 2001·41 cites·19 claims
- 0872US4684413AMethod for increasing the switching speed of a semiconductor device by neutron irradiationRCA CORP·Filed 1985·Granted Aug 4, 1987·39 cites·11 claims
- 0970US4374455AMethod for manufacturing a vertical, grooved MOSFETRCA CORP·Filed 1982·Granted Feb 22, 1983·33 cites·11 claims
- 1070US4042293ALiquid crystal devices having diode characteristicsRCA CORP·Filed 1975·Granted Aug 16, 1977·22 cites·3 claims
- 1168US6011330AMiniature power supplySARNOFF CORP·Filed 1997·Granted Jan 4, 2000·34 cites·13 claims
- 1268US4268537AMethod for manufacturing a self-aligned contact in a grooved semiconductor surfaceRCA CORP·Filed 1979·Granted May 19, 1981·14 cites·13 claims
- 1363US4094582ALiquid crystal matrix display device with transistorsRCA CORP·Filed 1976·Granted Jun 13, 1978·16 cites·7 claims
- 1460US2025374594A1Moat termination structure for a semiconductor device and method of fabricating the sameIDEAL SEMICONDUCTOR DEVICES INC·Filed 2024·Application pending·0 cites
- 1555US6410912B1Method for reducing variations in arrays of micro-machined cantilever structures using ion implantationSARNOFF CORP·Filed 2000·Granted Jun 25, 2002·6 cites·14 claims
- 1655US4120567AElectro-optic deviceRCA CORP·Filed 1977·Granted Oct 17, 1978·13 cites·2 claims
- 1753US3991227AMethod for forming electrode patterns in transparent conductive coatings on glass substratesRCA CORP·Filed 1975·Granted Nov 9, 1976·11 cites·7 claims
- 1848US7982277B2High-efficiency thinned imager with reduced boron updiffusionSTANFORD RES INST INT·Filed 2009·Granted Jul 19, 2011·0 cites·9 claims
- 1947US5958793APatterning silicon carbide filmsSARNOFF CORP·Filed 1997·Granted Sep 28, 1999·13 cites·4 claims
- 2047US4937467AComplementary circuit and structure with common substrateGEN ELECTRIC·Filed 1989·Granted Jun 26, 1990·11 cites·12 claims
- 2144US4910563AComplementary circuit and structure with common substrateGEN ELECTRIC·Filed 1988·Granted Mar 20, 1990·10 cites·7 claims
- 2241US4700460AMethod for fabricating bidirectional vertical power MOS deviceRCA CORP·Filed 1986·Granted Oct 20, 1987·8 cites·7 claims
- 2339US6057182AHydrogenation of polysilicon thin film transistorsSARNOFF CORP·Filed 1997·Granted May 2, 2000·7 cites·13 claims
- 2439US4641164ABidirectional vertical power MOS device and fabrication methodRCA CORP·Filed 1986·Granted Feb 3, 1987·9 cites·3 claims
- 2535US2002117748A1Integrated circuit power supplyFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →