Inventor · disambiguated record
Lain-Jong Li
Also filed as: LI LAIN-JONG
72 granted patents·22 pending applications·818 citations·filing 2000–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD44TAIWAN SEMICONDUCTOR MFG23UNIV KING ABDULLAH SCI & TECH10ACADEMIA SINICA3LI LAIN-JONG2
Top patents by PatentIndex Score
94 records- 0198US6602779B1Method for forming low dielectric constant damascene structure while employing carbon doped silicon oxide planarizing stop layerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 5, 2003·225 cites·15 claims
- 0296US11910732B2Resistive memory devices using a carbon-based conductor line and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·2 cites·20 claims
- 0396US11824106B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 21, 2023·2 cites·20 claims
- 0494US6319809B1Method to reduce via poison in low-k Cu dual damascene by UV-treatmentTAIWAN SEMICONDUCTOR MANFACTUR·Filed 2000·Granted Nov 20, 2001·97 cites·23 claims
- 0592US9478796B2Graphene-containing electrodesACADEMIA SINICA·Filed 2013·Granted Oct 25, 2016·14 cites·28 claims
- 0692US8858776B2Preparation of graphene sheetsLI LAIN-JONG·Filed 2011·Granted Oct 14, 2014·13 cites·14 claims
- 0791US11923203B2Semiconductor device and method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·1 cites·20 claims
- 0891US11430666B2Semiconductor device and method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·5 cites·20 claims
- 0991US11239354B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·2 cites·20 claims
- 1090US11244866B2Low dimensional material device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·2 cites·20 claims
- 1190US6358839B1Solution to black diamond film delamination problemTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 19, 2002·53 cites·14 claims
- 1289US11538682B2Method for growing a transition metal dichalcogenide layer, transition metal dichalcogenide growth device, and method for forming a semiconductor deviceUNIV KING ABDULLAH SCI & TECH·Filed 2018·Granted Dec 27, 2022·5 cites·20 claims
- 1389US9327981B2Method for producing thin graphene nanoplatelets and precusor thereofNAT INST CHUNG SHAN SCIENCE & TECHNOLOGY·Filed 2012·Granted May 3, 2016·12 cites·7 claims
- 1489US8592291B2Fabrication of large-area hexagonal boron nitride thin filmsSHI YUMENG·Filed 2011·Granted Nov 26, 2013·27 cites·20 claims
- 1588US11037783B2Field effect transistor using transition metal dichalcogenide and a method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·4 cites·20 claims
- 1688US6756321B2Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constantTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 29, 2004·49 cites·19 claims
- 1788US2025318449A1Resistive memory devices using a carbon-based conductor line and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1887US11527659B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·2 cites·20 claims
- 1987US8685843B2Direct growth of graphene on substratesLI LAIN-JONG·Filed 2012·Granted Apr 1, 2014·15 cites·36 claims
- 2087US6483173B2Solution to black diamond film delamination problemTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Nov 19, 2002·40 cites·5 claims
- 2187US2025323060A1Semiconductor device and method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2286US6407013B1Soft plasma oxidizing plasma method for forming carbon doped silicon containing dielectric layer with enhanced adhesive propertiesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 18, 2002·43 cites·13 claims
- 2386US6372661B1Method to improve the crack resistance of CVD low-k dielectric constant materialTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 16, 2002·60 cites·32 claims
- 2485US12364170B2Resistive memory devices using a carbon-based conductor line and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 2585US12166113B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 2685US9637839B2Synthesis and transfer of metal dichalcogenide layers on diverse surfacesMASSACHUSETTS INST TECHNOLOGY·Filed 2014·Granted May 2, 2017·2 cites·19 claims
- 2785US6753260B1Composite etching stop in semiconductor process integrationTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 22, 2004·29 cites·26 claims
- 2884US12387944B2Semiconductor device and method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 2984US12151213B2Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 3084US11688605B2Semiconductor device with two-dimensional materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 27, 2023·1 cites·20 claims
- 3184US2025063771A1Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3283US11349069B2Resistive memory devices using a carbon-based conductor line and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 31, 2022·2 cites·20 claims
- 3383US2024390861A1Method of Manufacturing Semiconductor Devices Including The Steps of Removing One or More of the Nanotubes from the Stack of Nanotubes, and/or Removing Spacers that Surrounds Each of the Plurality of Nanotubes, and Forming Gate Dielectric and/or Gate Electrode to the NanotubesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3481US6657284B1Graded dielectric layer and method for fabrication thereofTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Dec 2, 2003·24 cites·8 claims
- 3580US12490478B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 3680US12170323B2Nano transistors with source/drain having side contacts to 2-D materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 3780US2025133778A1Fin field-effect transistor device with low-dimensional material and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3879US2024379440A1Transistors with channels formed of low-dimensional materials and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3979US2024379832A1Cmos fabrication methods for back-gate transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4079US2025329534A1Semiconductor device with two-dimensional materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4178US12400860B2Semiconductor device with two-dimensional materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 4278US11854895B2Transistors with channels formed of low-dimensional materials and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 4378US11749528B2Method of manufacturing semiconductor devices including the steps of removing a plurality of spacers that surrounds each of the plurality of nanotubes into a layer of nanotubes, and forming gate dielectric and/or gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 5, 2023·0 cites·20 claims
- 4478US2024379800A1Nano transistors with source/drain having side contacts to 2-d materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4577US2024105515A1Transistors with channels formed of low-dimensional materials and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4676US12211931B2Fin field-effect transistor device with low-dimensional material and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 4775US12237375B2Semiconductor structure of stacked two-dimensional material layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 4875US11094811B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·1 cites·20 claims
- 4975US2023378334A1CMOS Fabrication Methods for Back-Gate TransistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5074US10998452B2Semiconductor device having a lateral semiconductor heterojunction and methodUNIV KING ABDULLAH SCI & TECH·Filed 2018·Granted May 4, 2021·1 cites·14 claims
Showing the top 50 of 94 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →