Inventor · disambiguated record
Larson Lindholm
Also filed as: LINDHOLM LARSON · LINDHOLM LARSON D
14 granted patents·1 pending application·78 citations·filing 2005–2013
92Inventor score
Top patents by PatentIndex Score
15 records- 0191US7696568B2Semiconductor device having reduced sub-threshold leakageMICRON TECHNOLOGY INC·Filed 2007·Granted Apr 13, 2010·18 cites·9 claims
- 0289US7879659B2Methods of fabricating semiconductor devices including dual fin structuresMICRON TECHNOLOGY INC·Filed 2007·Granted Feb 1, 2011·14 cites·34 claims
- 0387US9219001B2Methods of forming semiconductor devices having recessesMICRON TECHNOLOGY INC·Filed 2013·Granted Dec 22, 2015·6 cites·19 claims
- 0485US7897465B2Semiconductor device having reduced sub-threshold leakageMICRON TECHNOLOGY INC·Filed 2010·Granted Mar 1, 2011·6 cites·15 claims
- 0583US8138526B2Semiconductor structures including dual finsWILSON AARON R·Filed 2010·Granted Mar 20, 2012·5 cites·17 claims
- 0682US7910971B2Methods of forming vertical field effect transistors, vertical field effect transistors, and dram cellsMICRON TECHNOLOGY INC·Filed 2008·Granted Mar 22, 2011·8 cites·35 claims
- 0780US7648915B2Methods of forming semiconductor constructions, and methods of recessing materials within openingsMICRON TECHNOLOGY INC·Filed 2007·Granted Jan 19, 2010·5 cites·52 claims
- 0878US8178911B2Semiconductor device having reduced sub-threshold leakageHWANG DAVID K·Filed 2011·Granted May 15, 2012·5 cites·15 claims
- 0977US9041086B2Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cellsLINDHOLM LARSON·Filed 2012·Granted May 26, 2015·5 cites·14 claims
- 1077US8022473B2Semiconductor device having reduced sub-threshold leakageMICRON TECHNOLOGY INC·Filed 2011·Granted Sep 20, 2011·3 cites·19 claims
- 1165US8497530B2Semiconductor structures including dual finsWILSON AARON R·Filed 2012·Granted Jul 30, 2013·1 cites·13 claims
- 1264US8211763B2Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cellsLINDHOLM LARSON D·Filed 2011·Granted Jul 3, 2012·2 cites·11 claims
- 1359US7808041B2Semiconductor constructions of memory device with different depth gate line trenchesMICRON TECHNOLOGY INC·Filed 2009·Granted Oct 5, 2010·0 cites·11 claims
- 1451US7948030B2Semiconductor constructions of memory devices with different sizes of GateLine trenchesMICRON TECHNOLOGY INC·Filed 2010·Granted May 24, 2011·0 cites·11 claims
- 1541US2007045230A1Methods for independently controlling one or more etching parameters in the manufacture of microfeature devicesMICRON TECHNOLOGY INC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →