Inventor · disambiguated record
Leo Esaki
Also filed as: CHANG LEROY L · ESAKI LEO
21 granted patents·774 citations·filing 1977–1993
96Inventor score
Top patents by PatentIndex Score
21 records- 0195US4665415ASemiconductor device with hole conduction via strained latticeIBM·Filed 1985·Granted May 12, 1987·261 cites·12 claims
- 0291US4103312ASemiconductor memory devicesIBM·Filed 1977·Granted Jul 25, 1978·49 cites·50 claims
- 0387US4163238AInfrared semiconductor device with superlattice regionUS ARMY·Filed 1978·Granted Jul 31, 1979·37 cites·13 claims
- 0483US5079601AOptoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctionsIBM·Filed 1989·Granted Jan 7, 1992·47 cites·42 claims
- 0583US4250515AHeterojunction superlattice with potential well depth greater than half the bandgapUS ARMY·Filed 1978·Granted Feb 10, 1981·26 cites·6 claims
- 0682US4538165AFET With heterojunction induced channelIBM·Filed 1984·Granted Aug 27, 1985·34 cites·4 claims
- 0780US4198644ATunnel diodeUS ARMY·Filed 1978·Granted Apr 15, 1980·34 cites·5 claims
- 0879US4558336AMBE Growth technique for matching superlattices grown on GaAs substratesUS ARMY·Filed 1984·Granted Dec 10, 1985·44 cites·4 claims
- 0978US4173763AHeterojunction tunneling base transistorIBM·Filed 1977·Granted Nov 6, 1979·21 cites·44 claims
- 1076US4137542ASemiconductor structureIBM·Filed 1977·Granted Jan 30, 1979·19 cites·8 claims
- 1174US4348686AMicrowave-infrared detector with semiconductor superlattice regionUS ARMY·Filed 1980·Granted Sep 7, 1982·31 cites·10 claims
- 1272US4208667AControlled absorption in heterojunction structuresUS ARMY·Filed 1978·Granted Jun 17, 1980·23 cites·3 claims
- 1369US5294287AClass of magnetic materials for solid state devicesIBM·Filed 1991·Granted Mar 15, 1994·26 cites·15 claims
- 1468US4205331AInfrared optical devices of layered structureUS ARMY·Filed 1978·Granted May 27, 1980·28 cites·4 claims
- 1564US4395722AHeterojunction transistorUS ARMY·Filed 1980·Granted Jul 26, 1983·18 cites·11 claims
- 1661US4517047AMBE growth technique for matching superlattices grown on GaAs substratesUS ARMY·Filed 1981·Granted May 14, 1985·23 cites·14 claims
- 1756US4371884AInAs-GaSb Tunnel diodeUS ARMY·Filed 1981·Granted Feb 1, 1983·13 cites·15 claims
- 1855US4743951AField effect transistorIBM·Filed 1982·Granted May 10, 1988·12 cites·2 claims
- 1953US4239584AMolecular-beam epitaxy system and method including hydrogen treatmentIBM·Filed 1978·Granted Dec 16, 1980·9 cites·2 claims
- 2050US5296048AClass of magnetic materials for solid state devicesIBM·Filed 1993·Granted Mar 22, 1994·10 cites·33 claims
- 2143US4733282AOne-dimensional quantum pipeline type carrier path semiconductor devicesIBM·Filed 1985·Granted Mar 22, 1988·9 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →