Inventor · disambiguated record
Leonard Forbes
Also filed as: AHN KIE Y · FORBES LEONARD
1,109 granted patents·100 pending applications·56,676 citations·filing 1989–2024
99Inventor score
Top patents by PatentIndex Score
1,209 records- 0199US7902582B2Tantalum lanthanide oxynitride filmsMICRON TECHNOLOGY INC·Filed 2009·Granted Mar 8, 2011·523 cites·25 claims
- 0299US7605650B2Switched capacitor amplifier with higher gain and improved closed-loop gain accuracyMICRON TECHNOLOGY INC·Filed 2008·Granted Oct 20, 2009·136 cites·26 claims
- 0399US7405454B2Electronic apparatus with deposited dielectric layersMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 29, 2008·585 cites·28 claims
- 0499US7393736B2Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectricsMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 1, 2008·582 cites·59 claims
- 0599US7369435B2Write once read only memory employing floating gatesMICRON TECHNOLOGY INC·Filed 2005·Granted May 6, 2008·277 cites·21 claims
- 0699US7312494B2Lanthanide oxide / hafnium oxide dielectric layersMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 25, 2007·605 cites·28 claims
- 0799US7235501B2Lanthanum hafnium oxide dielectricsMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 26, 2007·658 cites·58 claims
- 0899US7192892B2Atomic layer deposited dielectric layersMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 20, 2007·630 cites·56 claims
- 0999US7192824B2Lanthanide oxide / hafnium oxide dielectric layersMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 20, 2007·638 cites·45 claims
- 1099US7169673B2Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectricsMICRON TECHNOLOGY INC·Filed 2005·Granted Jan 30, 2007·120 cites·26 claims
- 1199US7135421B2Atomic layer-deposited hafnium aluminum oxideMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 14, 2006·664 cites·61 claims
- 1299US7120046B1Memory array with surrounding gate access transistors and capacitors with global and staggered local bit linesMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 10, 2006·97 cites·23 claims
- 1399US7045430B2Atomic layer-deposited LaAlO3 films for gate dielectricsMICRON TECHNOLOGY INC·Filed 2002·Granted May 16, 2006·723 cites·53 claims
- 1499US6921702B2Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectricsMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 26, 2005·279 cites·22 claims
- 1599US6835111B2Field emission display having porous silicon dioxide layerMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 28, 2004·109 cites·33 claims
- 1699US6778441B2Integrated circuit memory device and methodMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 17, 2004·220 cites·81 claims
- 1799US6754108B2DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulatorsMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 22, 2004·206 cites·64 claims
- 1899US6744094B2Floating gate transistor with horizontal gate layers stacked next to vertical bodyMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 1, 2004·358 cites·22 claims
- 1999US6689660B14 F2 folded bit line DRAM cell structure having buried bit and word linesMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 10, 2004·356 cites·41 claims
- 2099US6570248B1Structure and method for a high-performance electronic packaging assemblyMICRON TECHNOLOGY INC·Filed 2001·Granted May 27, 2003·363 cites·39 claims
- 2199US6566682B2Programmable memory address and decode circuits with ultra thin vertical body transistorsMICRON TECHNOLOGY INC·Filed 2001·Granted May 20, 2003·312 cites·54 claims
- 2299US6545314B2Memory using insulator trapsMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 8, 2003·349 cites·38 claims
- 2399US6514820B2Method for forming single electron resistor memoryMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 4, 2003·253 cites·10 claims
- 2499US6514828B2Method of fabricating a highly reliable gate oxideMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 4, 2003·464 cites·39 claims
- 2599US6504201B1Memory cell having a vertical transistor with buried source/drain and dual gatesMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 7, 2003·215 cites·28 claims
- 2699US6492233B2Memory cell with vertical transistor and buried word and body linesMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 10, 2002·154 cites·29 claims
- 2799US6429120B1Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metalsMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 6, 2002·192 cites·25 claims
- 2899US6424001B1Flash memory with ultra thin vertical body transistorsMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 23, 2002·336 cites·49 claims
- 2999US6399979B1Memory cell having a vertical transistor with buried source/drain and dual gatesMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 4, 2002·208 cites·35 claims
- 3099US6377070B1In-service programmable logic arrays with ultra thin vertical body transistorsMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 23, 2002·300 cites·77 claims
- 3199US6351411B2Memory using insulator trapsMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 26, 2002·185 cites·12 claims
- 3299US6246606B1Memory using insulator trapsMICRON TECHNOLOGY INC·Filed 1999·Granted Jun 12, 2001·244 cites·18 claims
- 3399US6238976B1Method for forming high density flash memoryMICRON TECHNOLOGY INC·Filed 1998·Granted May 29, 2001·328 cites·15 claims
- 3499US6191448B1Memory cell with vertical transistor and buried word and body linesMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 20, 2001·153 cites·55 claims
- 3599US6150687AMemory cell having a vertical transistor with buried source/drain and dual gatesMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 21, 2000·451 cites·24 claims
- 3699US6143636AHigh density flash memoryMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 7, 2000·323 cites·14 claims
- 3799US6141248ADRAM and SRAM memory cells with repressed memoryMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 31, 2000·345 cites·83 claims
- 3899US6072209AFour F2 folded bit line DRAM cell structure having buried bit and word linesMICRO TECHNOLOGY INC·Filed 1997·Granted Jun 6, 2000·395 cites·17 claims
- 3999US6031263ADEAPROM and transistor with gallium nitride or gallium aluminum nitride gateMICRON TECHNOLOGY INC·Filed 1997·Granted Feb 29, 2000·242 cites·53 claims
- 4099US6025627AAlternate method and structure for improved floating gate tunneling devicesMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 15, 2000·395 cites·23 claims
- 4199US5991225AProgrammable memory address decode array with vertical transistorsMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 23, 1999·319 cites·30 claims
- 4299US5973356AUltra high density flash memoryMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 26, 1999·352 cites·24 claims
- 4399US5936274AHigh density flash memoryMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 10, 1999·379 cites·21 claims
- 4499US5909618AMethod of making memory cell with vertical transistor and buried word and body linesMICRON TECHNOLOGY INC·Filed 1997·Granted Jun 1, 1999·353 cites·9 claims
- 4598US7727908B2Deposition of ZrA1ON filmsMICRON TECHNOLOGY INC·Filed 2006·Granted Jun 1, 2010·69 cites·22 claims
- 4698US7687409B2Atomic layer deposited titanium silicon oxide filmsMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 30, 2010·79 cites·52 claims
- 4798US7670646B2Methods for atomic-layer depositionMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 2, 2010·55 cites·25 claims
- 4898US7615438B2Lanthanide yttrium aluminum oxide dielectric filmsMICRON TECHNOLOGY INC·Filed 2005·Granted Nov 10, 2009·81 cites·60 claims
- 4998US7563730B2Hafnium lanthanide oxynitride filmsMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 21, 2009·49 cites·76 claims
- 5098US7531869B2Lanthanum aluminum oxynitride dielectric filmsMICRON TECHNOLOGY INC·Filed 2006·Granted May 12, 2009·50 cites·25 claims
Showing the top 50 of 1,209 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →