Inventor · disambiguated record
Lee-Yeun Hwang
Also filed as: HWANG LEE Y · HWANG LEE-YEUN
5 granted patents·83 citations·filing 1995–2004
77Inventor score
Top patents by PatentIndex Score
5 records- 0183US5620912AMethod of manufacturing a semiconductor device using a spacerLG SEMICON CO LTD·Filed 1995·Granted Apr 15, 1997·70 cites·14 claims
- 0242US7301201B2High voltage device having polysilicon region in trench and fabricating method thereofHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Nov 27, 2007·2 cites·22 claims
- 0339US6706567B2High voltage device having polysilicon region in trench and fabricating method thereofHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Mar 16, 2004·1 cites·10 claims
- 0439US5843825AFabrication method for semiconductor device having non-uniformly doped channel (NUDC) constructionLG SEMICON CO LTD·Filed 1996·Granted Dec 1, 1998·10 cites·20 claims
- 0526US5985710ATwin well forming method for semiconductor deviceLG SEMICON CO LTD·Filed 1998·Granted Nov 16, 1999·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →