Inventor · disambiguated record
Lei Xue
Also filed as: XUE LEI
87 granted patents·43 pending applications·127 citations·filing 2005–2025
98Inventor score
Files withYANGTZE MEMORY TECH CO LTD55SPANSION LLC16CYPRESS SEMICONDUCTOR CORP14INST GEOLOGY & GEOPHYSICS CAS7MAGNA SEATING RES & DEVELOPMENT CHONGQING CO LTD4
Top patents by PatentIndex Score
130 records- 0195US11563021B2Memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 24, 2023·10 cites·20 claims
- 0295US11215543B1Rock mass shear test system for high-energy accelerator computed tomography (CT) scanningINST GEOLOGY & GEOPHYSICS CAS·Filed 2021·Granted Jan 4, 2022·5 cites·16 claims
- 0394US11302627B1On-chip capacitors in three-dimensional semiconductor devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Apr 12, 2022·3 cites·20 claims
- 0494US11287356B1Variable angle loading testing machineINST GEOLOGY & GEOPHYSICS CAS·Filed 2021·Granted Mar 29, 2022·8 cites·10 claims
- 0591US7416940B1Methods for fabricating flash memory devicesSPANSION LLC·Filed 2006·Granted Aug 26, 2008·17 cites·25 claims
- 0690US11371921B1Clamp and shear test deviceINST GEOLOGY & GEOPHYSICS CAS·Filed 2021·Granted Jun 28, 2022·2 cites·12 claims
- 0790US8866213B2Non-Volatile memory with silicided bit line contactsSPANSION LLC·Filed 2013·Granted Oct 21, 2014·6 cites·15 claims
- 0889US11824356B1System and method of black start for new power system with energy storage configurationXIAN THERMAL POWER RES INST CO·Filed 2023·Granted Nov 21, 2023·6 cites·6 claims
- 0989US10020317B2Memory device with multi-layer channel and charge trapping layerCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Jul 10, 2018·7 cites·20 claims
- 1087US11716847B2Three-dimensional NAND memory device with split gatesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 1, 2023·2 cites·20 claims
- 1187US11094714B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Aug 17, 2021·3 cites·20 claims
- 1287US8652907B2Integrating transistors with different poly-silicon heights on the same dieLIN CHUAN·Filed 2011·Granted Feb 18, 2014·9 cites·15 claims
- 1386US9252154B2Non-volatile memory with silicided bit line contactsSPANSION LLC·Filed 2014·Granted Feb 2, 2016·4 cites·20 claims
- 1486US7053445B1Memory device with barrier layerSPANSION LLC·Filed 2005·Granted May 30, 2006·11 cites·20 claims
- 1582US2025301651A1Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1679US9831114B1Self-aligned trench isolation in integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Nov 28, 2017·2 cites·18 claims
- 1779US9589805B2Split-gate semiconductor device with L-shaped gateCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Mar 7, 2017·2 cites·8 claims
- 1879US8598005B2Method and manufacture for embedded flash to achieve high quality spacers for core and high voltage devices and low temperature spacers for high performance logic devicesCHAN SIMON SIU-SING·Filed 2011·Granted Dec 3, 2013·6 cites·20 claims
- 1977US11348936B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted May 31, 2022·2 cites·20 claims
- 2077US9437470B2Self-aligned trench isolation in integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Sep 6, 2016·3 cites·14 claims
- 2177US2024213144A1On-chip capacitors in semiconductor devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2275US2025056804A1Three-dimensional memory device with improved charge lateral migration and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2374US11183509B2Non-volatile memory with silicided bit line contactsInfineon Technologies LLC·Filed 2020·Granted Nov 23, 2021·0 cites·10 claims
- 2474US10879263B2Three-dimensional memory devices with architecture of increased number of bit linesYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Dec 29, 2020·1 cites·20 claims
- 2574US8279674B2High read speed memory with gate isolationFASTOW RICHARD·Filed 2010·Granted Oct 2, 2012·3 cites·20 claims
- 2673US8809206B2Patterned dummy wafers loading in batch type CVDSUGINO RINJI·Filed 2011·Granted Aug 19, 2014·3 cites·21 claims
- 2773US8143661B2Memory cell system with charge trapFANG SHENQING·Filed 2006·Granted Mar 27, 2012·5 cites·19 claims
- 2872US12402309B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 26, 2025·0 cites·20 claims
- 2971US11955422B2On-chip capacitors in semiconductor devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 9, 2024·0 cites·15 claims
- 3071US11515329B2Three-dimensional memory device and manufacturing method thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Nov 29, 2022·0 cites·18 claims
- 3169US11652042B2On-chip capacitors in semiconductor devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted May 16, 2023·0 cites·17 claims
- 3269US10193910B2Network attack detection methodUNIV HONG KONG POLYTECHNIC·Filed 2017·Granted Jan 29, 2019·2 cites·7 claims
- 3369US9734074B2Data copy avoidance across a storageEMC CORP·Filed 2014·Granted Aug 15, 2017·2 cites·10 claims
- 3468US11069712B2Three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 20, 2021·0 cites·7 claims
- 3567US12171098B2Three-dimensional memory device with improved charge lateral migration and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 17, 2024·0 cites·19 claims
- 3665US12185536B2Three-dimensional memory devices with reduced cell interference and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·20 claims
- 3765US11802084B2Rock similar material satisfying water-induced strength degradation characteristic and preparation method and use thereofINST GEOLOGY & GEOPHYSICS CAS·Filed 2022·Granted Oct 31, 2023·0 cites·9 claims
- 3865US7951675B2SI trench between bitline HDP for BVDSS improvementSPANSION LLC·Filed 2007·Granted May 31, 2011·3 cites·19 claims
- 3964US2024196607A1Bi-directional conductive signal path for a 3d nand device and methods of fabricating the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4063US12507406B23D memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 4162US10854628B2Three-dimensional memory device and manufacturing method thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Dec 1, 2020·0 cites·12 claims
- 4262US10692877B2Non-volatile memory with silicided bit line contactsCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Jun 23, 2020·0 cites·5 claims
- 4361US12453094B2Method for removing sacrificial layers of a stack of a three-dimensional semiconductor structure in two stepsYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 4461US11502099B2Three-dimensional memory devices with architecture of increased number of bit linesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·12 claims
- 4561US10593688B2Split-gate semiconductor device with L-shaped gateCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Mar 17, 2020·0 cites·21 claims
- 4661US2025317271A1Communication method, apparatus, and systemHUAWEI TECH CO LTD·Filed 2025·Application pending·0 cites
- 4760US11538824B2Three-dimensional memory devices with improved charge confinement and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Dec 27, 2022·0 cites·20 claims
- 4859US12384221B2Vehicle and air conditioning system thereofNIO TECHNOLOGY ANHUI CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·14 claims
- 4958US9666591B2Non-volatile memory with silicided bit line contactsCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted May 30, 2017·0 cites·20 claims
- 5058US9252026B2Buried trench isolation in integrated circuitsSPANSION LLC·Filed 2014·Granted Feb 2, 2016·0 cites·20 claims
Showing the top 50 of 130 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →