Inventor · disambiguated record

Li-Yang Chuang

Also filed as: CHUANG LI-YANG

17 granted patents·3 pending applications·18 citations·filing 2019–2025

90Inventor score

Technology areasH10D H10P H10W

Files withTAIWAN SEMICONDUCTOR MFG CO LTD20

Top patents by PatentIndex Score

20 records

0198US11296082B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·6 cites·20 claims
0296US11688736B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 27, 2023·2 cites·20 claims
0395US11217676B1Antenna-free high-k gate dielectric for a gate-all-around transistor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·4 cites·20 claims
0487US12490476B2Method and device for boosting performance of FinFETs via strained spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 2, 2025·0 cites·20 claims
0586US11575034B2Back end of line nanowire power switch transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·1 cites·20 claims
0686US2025324637A1Isolation structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0785US10964816B2Method and device for boosting performance of FinFETs via strained spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·2 cites·20 claims
0885US2025107222A1Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
0984US12317528B2Gate isolation feature and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
1084US10971609B2Back end of line nanowire power switch transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·2 cites·20 claims
1182US12396191B2Isolation structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
1282US12166036B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
1382US12148830B2Method and device for boosting performance of FinFETs via strained spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
1481US12062714B2Back end of line nanowire power switch transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
1581US11245028B2Isolation structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·1 cites·20 claims
1681US2025287631A1Gate Isolation Feature and Manufacturing Method ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1779US12021136B2Gate isolation feature and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
1876US12051738B2Isolation structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
1974US11664451B2Method and device for boosting performance of FinFETs via strained spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
2053US11799019B2Gate isolation feature and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 24, 2023·0 cites·20 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →