Inventor · disambiguated record
Liesl Folks
Also filed as: FOLKS LIESL
14 granted patents·1 pending application·331 citations·filing 1999–2011
92Inventor score
Files withIBM4FOLKS LIESL3HITACHI GLOBAL STORAGE TECH3HITACHI GLOBAL STORAGE TECH NL3BOONE JR THOMAS DUDLEY1
Top patents by PatentIndex Score
15 records- 0196US6331364B1Patterned magnetic recording media containing chemically-ordered FePt of CoPtIBM·Filed 1999·Granted Dec 18, 2001·152 cites·12 claims
- 0294US6440520B1Patterned magnetic recording disk with substrate patterned by ion implantationIBM·Filed 1999·Granted Aug 27, 2002·100 cites·23 claims
- 0385US6741429B1Ion beam definition of magnetoresistive field sensorsIBM·Filed 2000·Granted May 25, 2004·17 cites·12 claims
- 0484US7872905B2Method and apparatus for write enable and inhibit for high density spin torque three dimensional (3D) memory arraysHITACHI GLOBAL STORAGE TECH NL·Filed 2008·Granted Jan 18, 2011·18 cites·15 claims
- 0583US7466521B2EMR structure with bias control and enhanced linearity of signalHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Dec 16, 2008·5 cites·19 claims
- 0681US7652915B2High density spin torque three dimensional (3D) memory arrays addressed with microwave currentHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Jan 26, 2010·11 cites·7 claims
- 0780US8199553B2Multilevel frequency addressable field driven MRAMCHEN WENYU·Filed 2009·Granted Jun 12, 2012·14 cites·6 claims
- 0877US8059373B2EMR sensor and transistor formed on the same substrateFOLKS LIESL·Filed 2006·Granted Nov 15, 2011·3 cites·16 claims
- 0970US7881020B2Extraordinary magnetoresistive (EMR) device with novel lead structureHITACHI GLOBAL STORAGE TECH NL·Filed 2007·Granted Feb 1, 2011·4 cites·27 claims
- 1068US8920948B2Substrate patterning in perpendicular storage mediaFOLKS LIESL·Filed 2011·Granted Dec 30, 2014·2 cites·9 claims
- 1167US8166633B2Method for manufacturing an extraordinary magnetoresistive (EMR) device with novel lead structureBOONE JR THOMAS DUDLEY·Filed 2010·Granted May 1, 2012·1 cites·7 claims
- 1256US6884632B2Ion beam definition of magnetoresistive field sensorsIBM·Filed 2004·Granted Apr 26, 2005·2 cites·9 claims
- 1351US8035927B2EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contactHITACHI GLOBAL STORAGE TECH NL·Filed 2008·Granted Oct 11, 2011·1 cites·14 claims
- 1447US8422284B2High density spin torque three dimensional (3D) memory arrays addressed with microwave currentFOLKS LIESL·Filed 2009·Granted Apr 16, 2013·1 cites·8 claims
- 1545US2007081277A1Method and apparatus for reducing shield noise in magnetoresistive sensorsHITACHI GLOBAL STORAGE TECH·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →