Inventor · disambiguated record
Lijie Fu
Also filed as: FU LIJIE
7 granted patents·7 pending applications·0 citations·filing 2017–2022
67Inventor score
Top patents by PatentIndex Score
14 records- 0161US12486598B2Rocking type seed crystal surface corrosion, cleaning and drying device and process methodTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2022·Granted Dec 2, 2025·0 cites·9 claims
- 0258US2025369150A1Injection synthesis method for semiconductor compoundTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2022·Application pending·0 cites
- 0357US12098478B2Apparatus for preparing a single crystal comprising a volatilization chamber and a plurality of crystal pieces fixed by combined fixtures located in a solid connection chamberTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2020·Granted Sep 24, 2024·0 cites·8 claims
- 0456US2024228286A1Purification apparatus and purification method for non-metal semiconductor materialTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2021·Application pending·0 cites
- 0556US2025369148A1Crystal growth device and method with temperature gradient controlTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2022·Application pending·0 cites
- 0654US10519563B2Device and method for continuous VGF crystal growth through rotation after horizontal injection synthesisTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2017·Granted Dec 31, 2019·0 cites·13 claims
- 0753US2024229291A1Large-scale compound semiconductor single crystal growth system and methodTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2021·Application pending·0 cites
- 0853US2024209545A1Method for preparing compound semiconductor crystal by combining continuous lec and vgf after injection synthesisTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2021·Application pending·0 cites
- 0952US11781240B2Method for preparing indium phosphide crystal by utilizing indium-phosphorus mixtureTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2020·Granted Oct 10, 2023·0 cites·10 claims
- 1051US2023069057A1Growth Device and Method for Low-Stress CrystalsTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2021·Application pending·0 cites
- 1150US12285819B2Method for cutting substrate wafer from indium phosphide crystal barTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2020·Granted Apr 29, 2025·0 cites·10 claims
- 1250US12188145B2Device and method for continuous VGF crystal growth through reverse injection synthesisTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2018·Granted Jan 7, 2025·0 cites·4 claims
- 1350US12116690B2Process for synthesizing indium phosphide by liquid phosphorus injection methodTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2020·Granted Oct 15, 2024·0 cites·9 claims
- 1446US2024035192A1Polishing Device for Indium Phosphide Substrate, and Polishing ProcessTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →