Inventor · disambiguated record

Li-Te Hsu

Also filed as: HSU LI TE

63 granted patents·10 pending applications·272 citations·filing 2003–2025

98Inventor score

Technology areasH10P H10W H10D H01L G11C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD60 TAIWAN SEMICONDUCTOR MFG11 HSU LI-TE1 YU TAI-YUNG1

Top patents by PatentIndex Score

73 records

0198US11088025B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·12 cites·20 claims
0298US10141225B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·17 cites·20 claims
0398US10083863B1Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·77 cites·20 claims
0497US11430694B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
0597US10510596B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·13 cites·20 claims
0695US11776847B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
0794US10825727B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·5 cites·20 claims
0894US9865697B1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·20 cites·20 claims
0993US10269917B2Method of forming a FinFET with work function tuning layers having stair-step increment sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·7 cites·20 claims
1093US9905456B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 27, 2018·7 cites·20 claims
1192US11043251B2Magnetic tunnel junction device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·11 cites·20 claims
1291US10510598B2Self-aligned spacers and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 17, 2019·7 cites·20 claims
1390US10679896B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·4 cites·18 claims
1489US10998259B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 4, 2021·4 cites·20 claims
1589US7588946B2Controlling system for gate formation of semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 15, 2009·29 cites·20 claims
1689US2025300016A1Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1787US11437484B2Gate structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 6, 2022·3 cites·20 claims
1887US10629480B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·4 cites·20 claims
1986US12347729B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
2086US10304729B2Method of forming interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·3 cites·20 claims
2185US12354913B2Contact structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
2285US10141443B2Semiconductor devices FinFET devices with optimized strained-sourece-drain recess profiles and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 27, 2018·4 cites·11 claims
2384US10910223B2Doping through diffusion and epitaxy profile shapingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 2, 2021·3 cites·20 claims
2483US12300593B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
2583US10763162B2Interconnect structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 1, 2020·2 cites·20 claims
2683US2025246528A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2782US2024274467A1Interconnect Structure of Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2881US11171003B2Doping through diffusion and epitaxy profile shapingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 9, 2021·2 cites·20 claims
2981US10515817B2Method for forming features of semiconductor structure having reduced end-to-end spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·2 cites·20 claims
3078US2025226263A1Contact Structure For Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3177US11810819B2Metal gates of transistors having reduced resistivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
3277US10157782B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 18, 2018·1 cites·20 claims
3375US12154608B2Magnetic tunnel junction device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
3475US9899526B2Fin-type field effect transistor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·4 cites·14 claims
3574US12015070B2Gate structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
3674US10495970B2Critical dimension uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·1 cites·20 claims
3774US10460995B2Method of manufacture of a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 29, 2019·1 cites·20 claims
3873US11810846B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
3972US11996325B2Interconnect structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 28, 2024·0 cites·20 claims
4071US11232978B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·20 claims
4170US9691809B2Backside illuminated image sensor device having an oxide film and method of forming an oxide film of a backside illuminated image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 27, 2017·2 cites·20 claims
4269US7018928B2Plasma treatment method to reduce silicon erosion over HDI silicon regionsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 28, 2006·12 cites·20 claims
4368US11532515B2Self-aligned spacers and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
4467US11990167B2Magnetic tunnel junction device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 21, 2024·0 cites·20 claims
4566US11251079B2Method for forming semiconductor device with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
4666US7910014B2Method and system for improving wet chemical bath process stability and productivity in semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 22, 2011·3 cites·20 claims
4765US10879109B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 29, 2020·0 cites·20 claims
4863US11043427B2Method of manufacture of a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·0 cites·20 claims
4963US10651079B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·0 cites·20 claims
5062US11004730B2Methods of forming conductive features using a vacuum environmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 11, 2021·0 cites·20 claims

Showing the top 50 of 73 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →