Inventor · disambiguated record

Lin-Yu Huang

Also filed as: HUANG LIN-YU

151 granted patents·101 pending applications·136 citations·filing 2019–2025

99Inventor score

Technology areasH10W H10P H10D B82Y G02B

Files withTAIWAN SEMICONDUCTOR MFG CO LTD250 RADIANT GUANGZHOU OPTO ELECTRONICS CO LTD1 TAIWAN SEMICONDUSTOR MFG CO LTD1

Top patents by PatentIndex Score

252 records

0199US11532713B2Source/drain contacts and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·6 cites·20 claims
0299US11404548B2Capacitance reduction for backside power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·7 cites·20 claims
0399US11374093B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·6 cites·20 claims
0499US11349004B2Backside vias in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·6 cites·20 claims
0598US11830769B2Semiconductor device with air gaps and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·4 cites·20 claims
0698US11456209B2Spacers for semiconductor devices including a backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·4 cites·20 claims
0798US11342413B2Selective liner on backside via and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·5 cites·20 claims
0898US11257758B2Backside connection structures for nanostructures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·5 cites·20 claims
0998US11239325B2Semiconductor device having backside via and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·6 cites·20 claims
1097US12009394B2Source/drain contacts and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·2 cites·20 claims
1197US11915972B2Methods of forming spacers for semiconductor devices including backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
1297US11682730B2Connector via structures for nanostructures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 20, 2023·4 cites·20 claims
1397US11551969B2Integrated circuit structure with backside interconnection structure having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 10, 2023·3 cites·20 claims
1497US11502201B2Semiconductor device with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·4 cites·20 claims
1597US11152475B2Method for forming source/drain contacts utilizing an inhibitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·4 cites·20 claims
1696US12132092B2Backside vias in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·2 cites·19 claims
1796US12040273B2Semiconductor device with multi-layer dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·2 cites·20 claims
1896US11984350B2Integrated circuit structure with backside interconnection structure having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·2 cites·20 claims
1996US11721623B2Backside connection structures for nanostructures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·2 cites·20 claims
2096US11670691B2Method for forming source/drain contacts utilizing an inhibitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
2196US11387140B2Enlarging contact area and process window for a contact viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·3 cites·20 claims
2296US11316023B2Dumbbell shaped self-aligned capping layer over source/drain contacts and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·3 cites·20 claims
2395US12369365B2Semiconductor devices with backside power rail and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·1 cites·20 claims
2495US11404570B2Semiconductor devices with embedded ferroelectric field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
2595US10937884B1Gate spacer with air gap for semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·10 cites·20 claims
2694US11588050B2Backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 21, 2023·2 cites·20 claims
2794US11563001B2Air spacer and capping structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·4 cites·20 claims
2893US11640941B2Semiconductor devices including metal gate protection and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 2, 2023·2 cites·18 claims
2992US12414362B2Fins disposed on stacks of nanostructures where the nanostructures are wrapped around by a gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·1 cites·20 claims
3092US11901423B2Capacitance reduction for backside power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
3192US11424332B2Gap spacer for backside contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·2 cites·20 claims
3291US11532714B2Semiconductor device and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
3391US11456246B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·2 cites·20 claims
3491US11309212B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·2 cites·20 claims
3591US2025344434A1Backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3690US11508615B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·2 cites·20 claims
3789US12356688B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 8, 2025·1 cites·20 claims
3889US11361986B2Using a liner layer to enlarge process window for a contact viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·2 cites·20 claims
3989US2025364320A1Semiconductor device with air gaps and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4089US2025364329A1Semiconductor devices including low-k metal gate isolation and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4188US11251305B2Fin field effect transistor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·2 cites·20 claims
4288US10943829B2Slot contacts and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·3 cites·20 claims
4388US2025329580A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4488US2024379408A1Source/drain isolation structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4587US12389665B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
4687US12363946B2Source/drain contacts and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
4787US12302607B2Backside gate contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
4887US12266563B2Enlarging contact area and process window for a contact viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
4987US2025331220A1Semiconductor device with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
5087US2025318216A1Semiconductor devices with backside power rail and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 252 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →