Inventor · disambiguated record

Lien Jung Hung

Also filed as: HUNG LIEN JUNG

68 granted patents·32 pending applications·90 citations·filing 1999–2025

98Inventor score

Technology areasH10D H10P H10W G11C H10B

Files withTAIWAN SEMICONDUCTOR MFG CO LTD94 TAIWAN SEMICONDUCTOR MFG3 DOONG YIH-YUH1 TAIWAN SEMICONDUCTGOR MFG CO LTD1

Top patents by PatentIndex Score

100 records

0198US11728227B1Test structure and test method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·8 cites·20 claims
0298US10050045B1SRAM cell with balanced write portTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·33 cites·20 claims
0396US11527539B2Four-poly-pitch SRAM cell with backside metal tracksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·6 cites·20 claims
0494US11552084B2Shared bit lines for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 10, 2023·3 cites·20 claims
0594US11444197B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
0691US2025358996A1Macro and sram bit cell cooptimizatoin for performance (long/shortwordline combo sram)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0790US11942145B2Static random access memory layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·1 cites·20 claims
0889US11404426B2Controlling trap formation to improve memory window in one-time program devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·20 claims
0989US2025324582A1Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1088US11315933B2SRAM structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 26, 2022·4 cites·20 claims
1188US11257817B2Integrated chip with improved latch-up immunityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·2 cites·20 claims
1288US7772868B2Accurate capacitance measurement for ultra large scale integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 10, 2010·9 cites·7 claims
1387US2025359008A1Integration of memory cell and logic cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1487US2025359247A1Memory device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1586US2025359002A1Bit line structure for memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1685US12374590B2Test structure and test method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
1785US12302609B2Semiconductor device including alternating semiconductor layers with different widths and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
1885US11393831B2Optimized static random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·1 cites·20 claims
1985US2025301618A1Memory device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2084US12426226B2Macro and SRAM bit cell cooptimizatoin for performance (long/shortwordline combo SRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
2184US12363893B2Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
2284US2025301783A1Gate Structures Having Neutral Zones to Minimize Metal Gate Boundary Effects and Methods of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2383US12336281B2Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
2482US12367925B2Static random access memory layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
2582US8115500B2Accurate capacitance measurement for ultra large scale integrated circuitsDOONG YIH-YUH·Filed 2011·Granted Feb 14, 2012·5 cites·11 claims
2681US12495571B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 9, 2025·0 cites·20 claims
2781US11996338B2Test structure and test method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·0 cites·20 claims
2881US2025308582A1Static random access memory layoutTAIWAN SEMICONDUCTGOR MFG CO LTD·Filed 2025·Application pending·0 cites
2981US2025133716A1Source/drain feature separation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3080US12446284B2Memory device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
3180US12349329B2Memory device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
3280US12080604B2Gate-all-around semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
3380US2025351325A1Memory devices with differently sized active regions in periphery circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3479US12016169B2Optimized static random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·18 claims
3579US2024292592A1Connection between source/drain and gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3678US12200921B2Memory device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
3778US2024379444A1Gate-all-around semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3878US2025351320A1Memory device with jogged backside metal linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3978US2025359262A1Connection between gate and source/drain featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4077US2023328948A1Sram cell with balanced write portTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4177US2025120059A1Bit line structure for memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4276US11980016B2Connection between source/drain and gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
4376US11956948B2Memory device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·0 cites·20 claims
4476US2024397690A1Sram structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4576US2024153949A1Integrated chip with improved latch-up immunityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4675US12495547B2Controlling trap formation to improve memory window in one-time program devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
4775US12178032B2Source/drain feature separation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
4875US12009428B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
4975US11937415B2Fin-based well straps for improving memory macro performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
5075US11908866B2Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims

Showing the top 50 of 100 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →