Inventor · disambiguated record
Liang-Tai Kuo
Also filed as: KUO LIANG-TAI
15 granted patents·3 pending applications·33 citations·filing 2011–2025
90Inventor score
Top patents by PatentIndex Score
18 records- 0194US10971596B2Semiconductor device with reduced flicker noiseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 6, 2021·3 cites·20 claims
- 0293US11688789B2Semiconductor device with reduced flicker noiseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·2 cites·20 claims
- 0393US11675383B2Voltage reference circuit and method for providing reference voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·3 cites·20 claims
- 0491US9620594B2Memory device, memory cell and memory cell layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 11, 2017·10 cites·20 claims
- 0591US9384815B2Mechanisms for preventing leakage currents in memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 5, 2016·8 cites·18 claims
- 0688US10529818B1Semiconductor device with reduced flicker noiseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·3 cites·20 claims
- 0783US12191374B2Semiconductor device with reduced flicker noiseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 0880US12422877B2Voltage reference circuit and method for providing reference voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 0976US2025318256A1Method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1073US12072726B2Voltage reference circuit and method for providing reference voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 1171US10163920B2Memory device and memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·1 cites·20 claims
- 1269US12363996B2Semiconductor structure and method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 1362US8890225B2Structure and method for single gate non-volatile memory device having a capacitor well doping design with improved coupling efficiencyLIAO TA-CHUAN·Filed 2011·Granted Nov 18, 2014·2 cites·25 claims
- 1460US10553597B2Memory cell including a plurality of wellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 4, 2020·0 cites·20 claims
- 1557US9159741B2Structure and method for single gate non-volatile memory device having a capacitor well doping design with improved coupling efficiencyTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 13, 2015·0 cites·20 claims
- 1657US2024257874A1Non-volatile memory cell structures and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1756US9711516B2Non-volatile memory having a gate-layered triple well structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·1 cites·20 claims
- 1856US2025017004A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →