Inventor · disambiguated record
Lih-Ping Li
Also filed as: LI LIH-PING
17 granted patents·8 pending applications·344 citations·filing 1999–2007
94Inventor score
Top patents by PatentIndex Score
25 records- 0195US6812043B2Method for forming a carbon doped oxide low-k insulating layerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 2, 2004·82 cites·26 claims
- 0292US6962869B1SiOCH low k surface protection layer formation by CxHy gas plasma treatmentTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 8, 2005·77 cites·26 claims
- 0388US6756321B2Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constantTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 29, 2004·49 cites·19 claims
- 0486US7288284B2Post-cleaning chamber seasoning methodTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 30, 2007·32 cites·7 claims
- 0579US6958524B2Insulating layer having graded densificationTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Oct 25, 2005·22 cites·22 claims
- 0667US7897505B2Method for enhancing adhesion between layers in BEOL fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 1, 2011·2 cites·6 claims
- 0767US6770570B2Method of forming a semiconductor device with a substantially uniform density low-k dielectric layerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 3, 2004·13 cites·9 claims
- 0864US6867126B1Method to increase cracking threshold for low-k materialsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 15, 2005·9 cites·37 claims
- 0962US7001833B2Method for forming openings in low-k dielectric layersTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 21, 2006·20 cites·22 claims
- 1056US6924242B2SiOC properties and its uniformity in bulk for damascene applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 2, 2005·5 cites·30 claims
- 1153US6623654B2Thin interface layer to improve copper etch stopTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 23, 2003·5 cites·30 claims
- 1251US6602780B2Method for protecting sidewalls of etched openings to prevent via poisoningTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 5, 2003·4 cites·19 claims
- 1350US6753269B1Method for low k dielectric depositionTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 22, 2004·2 cites·20 claims
- 1449US7456093B2Method for improving a semiconductor device delamination resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Nov 25, 2008·3 cites·33 claims
- 1549US6426371B1Sol materialsIND TECH RES INST·Filed 1999·Granted Jul 30, 2002·17 cites·11 claims
- 1648US7320945B2Gradient low k materialTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jan 22, 2008·1 cites·6 claims
- 1747US2005133931A1SiOC properties and its uniformity in bulk for damascene applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 1843US6884659B2Thin interface layer to improve copper etch stopTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 26, 2005·1 cites·3 claims
- 1943US2007264843A1Formation and applications of nitrogen-free silicon carbide in semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 2042US2004266216A1Method for improving uniformity in deposited low k dielectric materialTAIWAN SEMICONDUCTOR MFG·Filed 2004·Application pending·0 cites
- 2141US2006115980A1Method for decreasing a dielectric constant of a low-k filmTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 2240US2005140029A1Heterogeneous low k dielectricFiled 2004·Application pending·0 cites
- 2338US2004063308A1Method for forming openings in low-k dielectric layersTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
- 2437US2006205232A1Film treatment method preventing blocked etch of low-K dielectricsLI LIH-PING·Filed 2005·Application pending·0 cites
- 2537US2004219795A1Method to improve breakdown voltage by H2 plasma treatTAIWAN SEMICONDUCTOR MFG·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →