Inventor · disambiguated record
Linlin Liu
Also filed as: LIU LINLIN
31 granted patents·12 pending applications·309 citations·filing 2004–2023
97Inventor score
Files withPOWER INTEGRATIONS INC21EMCORE CORP5VELOX SEMICONDUCTOR CORP4RAMDANI JAMAL3SHANGHAI IC R&D CT CO LTD3
Top patents by PatentIndex Score
43 records- 0197US9722063B1Protective insulator for HFET devicesPOWER INTEGRATIONS INC·Filed 2016·Granted Aug 1, 2017·27 cites·27 claims
- 0297US9306014B1High-electron-mobility transistorsPOWER INTEGRATIONS INC·Filed 2014·Granted Apr 5, 2016·34 cites·26 claims
- 0395US8633094B2GaN high voltage HFET with passivation plus gate dielectric multilayer structureRAMDANI JAMAL·Filed 2011·Granted Jan 21, 2014·29 cites·23 claims
- 0493US7863172B2Gallium nitride semiconductor devicePOWER INTEGRATIONS INC·Filed 2008·Granted Jan 4, 2011·27 cites·18 claims
- 0592US8507947B2High quality GaN high-voltage HFETS on siliconRAMDANI JAMAL·Filed 2011·Granted Aug 13, 2013·12 cites·9 claims
- 0692US7084475B2Lateral conduction Schottky diode with plural mesasVELOX SEMICONDUCTOR CORP·Filed 2004·Granted Aug 1, 2006·85 cites·77 claims
- 0789US11373873B2Asymmetrical plug technique for GaN devicesPOWER INTEGRATIONS INC·Filed 2020·Granted Jun 28, 2022·2 cites·19 claims
- 0888US10204791B1Contact plug for high-voltage devicesPOWER INTEGRATIONS INC·Filed 2017·Granted Feb 12, 2019·4 cites·12 claims
- 0988US10121885B2Protective insulator for HFET devicesPOWER INTEGRATIONS INC·Filed 2017·Granted Nov 6, 2018·3 cites·17 claims
- 1087US10665463B2Asymmetrical plug technique for GaN devicesPOWER INTEGRATIONS INC·Filed 2018·Granted May 26, 2020·3 cites·10 claims
- 1185US8703561B2High quality GaN high-voltage HFETs on siliconPOWER INTEGRATIONS INC·Filed 2013·Granted Apr 22, 2014·4 cites·13 claims
- 1285US7436039B2Gallium nitride semiconductor deviceVELOX SEMICONDUCTOR CORP·Filed 2005·Granted Oct 14, 2008·10 cites·23 claims
- 1384US11075294B2Protective insulator for HFET devicesPOWER INTEGRATIONS INC·Filed 2020·Granted Jul 27, 2021·1 cites·14 claims
- 1484US10629719B2Protective insulator for HFET devicesPOWER INTEGRATIONS INC·Filed 2018·Granted Apr 21, 2020·2 cites·8 claims
- 1584US7439599B2PIN photodiode structure and fabrication process for reducing dielectric delaminationEMCORE CORP·Filed 2005·Granted Oct 21, 2008·10 cites·8 claims
- 1684US2024030337A1Protective insulator for hfet devicesPOWER INTEGRATIONS INC·Filed 2023·Application pending·0 cites
- 1783US8319256B2Layout design for a high power, GaN-based FETLIU LINLIN·Filed 2010·Granted Nov 27, 2012·9 cites·19 claims
- 1878US9525055B2High-electron-mobility transistorsPOWER INTEGRATIONS INC·Filed 2016·Granted Dec 20, 2016·2 cites·13 claims
- 1977US11776815B2Asymmetrical plug technique for GaN devicesPOWER INTEGRATIONS INC·Filed 2022·Granted Oct 3, 2023·0 cites·24 claims
- 2077US11721753B2Method of fabricating a transistorPOWER INTEGRATIONS INC·Filed 2021·Granted Aug 8, 2023·0 cites·13 claims
- 2177US9147734B2High quality GaN high-voltage HFETs on siliconPOWER INTEGRATIONS INC·Filed 2014·Granted Sep 29, 2015·2 cites·6 claims
- 2275US7538403B2PIN diode structure with zinc diffusion regionEMCORE CORP·Filed 2005·Granted May 26, 2009·3 cites·9 claims
- 2374US7229866B2Non-activated guard ring for semiconductor devicesVELOX SEMICONDUCTOR CORP·Filed 2004·Granted Jun 12, 2007·20 cites·12 claims
- 2472US8022495B2PIN diode structure with zinc diffusion regionEMCORE CORP·Filed 2009·Granted Sep 20, 2011·2 cites·12 claims
- 2572US7518240B2Deposition pattern for eliminating backside metal peeling during die separation in semiconductor device fabricationEMCORE CORP·Filed 2007·Granted Apr 14, 2009·3 cites·12 claims
- 2672US7198988B1Method for eliminating backside metal peeling during die separationEMCORE CORP·Filed 2005·Granted Apr 3, 2007·3 cites·20 claims
- 2763US7253015B2Low doped layer for nitride-based semiconductor deviceVELOX SEMICONDUCTOR CORP·Filed 2004·Granted Aug 7, 2007·11 cites·36 claims
- 2862US8530903B2Layout design for a high power, GaN-based FET having interdigitated electrodesPOWER INTEGRATIONS INC·Filed 2012·Granted Sep 10, 2013·1 cites·20 claims
- 2957US9437688B2High-quality GaN high-voltage HFETs on siliconPOWER INTEGRATIONS INC·Filed 2015·Granted Sep 6, 2016·0 cites·7 claims
- 3055US9343541B2Method of fabricating GaN high voltage HFET with passivation plus gate dielectric multilayer structurePOWER INTEGRATIONS INC·Filed 2014·Granted May 17, 2016·0 cites·15 claims
- 3153US8729565B2Layout design for a high power, GaN-based FET having interdigitated gate, source and drain electrodesPOWER INTEGRATIONS INC·Filed 2013·Granted May 20, 2014·0 cites·20 claims
- 3250US2013330888A1In situ grown gate dielectric and field plate dielectricPOWER INTEGRATIONS INC·Filed 2013·Application pending·0 cites
- 3350US2023221324A1Biosensing device for detecting cancerUNIV CITY HONG KONG·Filed 2022·Application pending·0 cites
- 3448US2024369612A1Measurement system for radio frequency mos device modeling and modeling method for radio frequency mos deviceSHANGHAI IC R & D CENTER CO LTD·Filed 2021·Application pending·0 cites
- 3547US2013146943A1In situ grown gate dielectric and field plate dielectricEDWARDS JOHN P·Filed 2011·Application pending·0 cites
- 3646US10520543B2Test structure and method for judging de-embedding accuracy of RF devices by using an introduced deviceSHANGHAI IC R&D CT CO LTD·Filed 2014·Granted Dec 31, 2019·0 cites·12 claims
- 3746US2010140627A1Package for Semiconductor DevicesSHELTON BRYAN S·Filed 2009·Application pending·0 cites
- 3846US2011101371A1Gallium nitride semiconductorPOWER INTEGRATIONS INC·Filed 2010·Application pending·0 cites
- 3941US2014077266A1Heterostructure Transistor with Multiple Gate Dielectric LayersRAMDANI JAMAL·Filed 2012·Application pending·0 cites
- 4041US2019296011A1Means for reducing finfet parasitic resistanceSHANGHAI IC R&D CT CO LTD·Filed 2017·Application pending·0 cites
- 4140US2019179991A1Method and system for testing optimization and molding optimization of semiconductor devicesSHANGHAI IC R&D CT CO LTD·Filed 2017·Application pending·0 cites
- 4237US2006151868A1Package for gallium nitride semiconductor devicesZHU TINGGANG·Filed 2005·Application pending·0 cites
- 4337US2019379007A1Manufacturing method for high-resolution array organic film, and use thereofUNIV SOUTH CHINA TECH·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →