Inventor · disambiguated record

Lianjuan Ren

Also filed as: REN LIANJUAN

4 granted patents·2 citations·filing 2019–2021

59Inventor score

Technology areasH10P

Files withYANGTZE MEMORY TECH CO LTD4

Top patents by PatentIndex Score

4 records

0176US11062913B2Etching process with in-situ formation of protective layerYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jul 13, 2021·2 cites·20 claims
0259US11631592B2Etching process with in-situ formation of protective layerYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 18, 2023·0 cites·20 claims
0357US11876016B2Methods for forming hole structure in semiconductor deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 16, 2024·0 cites·20 claims
0451US11817348B2Methods for forming hole structure in semiconductor deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Nov 14, 2023·0 cites·20 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →