Inventor · disambiguated record
Liang-Yu Su
Also filed as: SU LIANG · SU LIANG-YU
16 granted patents·10 pending applications·10 citations·filing 2011–2025
88Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD23UNIV NAT TAIWAN1XIAMEN KING LONG UNITED AUTOMOTIVE IND CO LTD1Xiong li-zhi1
Top patents by PatentIndex Score
26 records- 0192US11973076B2Electrostatic discharge protection circuit and semiconductor circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 30, 2024·2 cites·20 claims
- 0289US2025359085A1Reduced surface field layer in varactorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0387US11195945B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·3 cites·20 claims
- 0487US2025351585A1Electrostatic discharge protection circuit and semiconductor circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0587US2025338539A1Cap structure coupled to source to reduce saturation current in hemt deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0686US12363938B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 0785US12464738B2Integrated chip including a device with a reduced surface field regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 0882US12446325B2Electrostatic discharge protection circuit and semiconductor circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·19 claims
- 0982US12100757B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 1081US10978445B2Electrostatic discharge protection circuit and semiconductor circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 13, 2021·2 cites·20 claims
- 1180US11380779B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·1 cites·20 claims
- 1279US12317530B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 1377US2024395904A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1475US11742419B2Cap structure coupled to source to reduce saturation current in HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 1573US11978810B2Method for forming an IC including a varactor with reduced surface field regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·0 cites·20 claims
- 1673US11764288B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 1764US11018266B2Reduced surface field layer in varactorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·0 cites·20 claims
- 1860US2025338582A1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1960US2024405790A1V2X Vehicle-mounted Terminal Construction MethodXIAMEN KING LONG UNITED AUTOMOTIVE IND CO LTD·Filed 2024·Application pending·0 cites
- 2060US2025366191A1Semiconductor isolation structure for injection suppression and method of making thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2160US2022367614A1Avalanche-protected transistors using a bottom breakdown current path and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2257US2025089311A1High voltage mosfet using shallow-shallow trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2356US11437466B2Avalanche-protected transistors using a bottom breakdown current path and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 2456US8507808B2Shielding assembly and method for manufacturing sameXiong li-zhi·Filed 2011·Granted Aug 13, 2013·2 cites·8 claims
- 2551US2024371926A1Semiconductor device with enhanced avalanche ruggednessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2647US9425176B2Cascode transistor device and manufacturing method thereofUNIV NAT TAIWAN·Filed 2014·Granted Aug 23, 2016·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →