Inventor · disambiguated record
Li-Li Su
Also filed as: SU LI-LI
52 granted patents·30 pending applications·79 citations·filing 2016–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD82
Top patents by PatentIndex Score
82 records- 0198US11444181B2Source/drain formation with reduced selective loss defectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 13, 2022·3 cites·20 claims
- 0297US9831116B2FETS and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·23 cites·20 claims
- 0395US10453943B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 22, 2019·11 cites·20 claims
- 0494US12074071B2Source/drain structures and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·1 cites·20 claims
- 0594US11728208B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 0694US11355641B2Merged source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 7, 2022·2 cites·20 claims
- 0793US12349426B2Source/drain device and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·1 cites·20 claims
- 0892US10529803B2Semiconductor device with epitaxial source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·7 cites·20 claims
- 0991US11004724B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·5 cites·19 claims
- 1090US10510607B1Semiconductor device convex source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 1189US12419084B2Methods of forming transistor source/drain regions comprising carbon liner layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 16, 2025·1 cites·20 claims
- 1289US12336237B2Source/drain regions of semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 17, 2025·1 cites·20 claims
- 1389US10950730B2Merged source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·3 cites·20 claims
- 1489US2025324639A1Fets and methods of forming fetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1587US2025359197A1Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1686US12154974B2Source/drain formation with reduced selective loss defectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 1786US11990511B2Source/drain device and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 21, 2024·1 cites·20 claims
- 1886US2025006549A1FETS and Methods of Forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1985US11600534B2Source/drain structures and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·1 cites·20 claims
- 2085US11205713B2FinFET having a non-faceted top surface portion for a source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 21, 2021·2 cites·20 claims
- 2185US2024387702A1Source/drain formation with reduced selective loss defectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2284US12237230B2Semiconductor device with leakage current suppression and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 25, 2025·1 cites·20 claims
- 2384US10867861B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·3 cites·20 claims
- 2484US2025374663A1Source/Drain Regions of Semiconductor Devices and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2584US2025338566A1Semiconductor devices having a multilayer source/drain region and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2683US12402344B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 2783US2024258429A1Merged source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2883US2025324685A1Source/drain regions of semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2982US10468482B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·2 cites·20 claims
- 3082US10340190B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 2, 2019·3 cites·20 claims
- 3182US2025311323A1Transistor source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3282US2025311381A1Semiconductor device with leakage current suppression and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3381US12389671B2Source/drain regions of semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·19 claims
- 3480US12439651B2Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 3580US11855188B2Source/drain formation with reduced selective loss defectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3680US2025287661A1Source/Drain Device and Method of Forming ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3779US12363989B2Semiconductor device with leakage current suppression and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 3879US11961912B2Merged source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 3979US11600715B2FETs and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 7, 2023·1 cites·20 claims
- 4079US2024405070A1Transistor source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4179US2024387742A1Semiconductor device having a multilayer source/drain region and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4279US2024387629A1Source/drain regions of semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4378US2024363443A1Source/Drain Structures and Method of FormingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4477US2025351484A1Source/Drain Regions of Semiconductor Device Comprising Multi-layers with Various Doping Concentrations and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4576US2024371636A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4676US2025359236A1Epitaxial structures grown on material with a crystallographic orientation of {110}TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4775US2024379781A1Backside Source/Drain Contacts and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4875US2024379454A1Source/Drain Regions and Methods of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4974US12302615B2Epitaxial structures exposed in airgaps for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 5074US11804487B2Source/drain regions of semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
Showing the top 50 of 82 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →