Inventor · disambiguated record
Lilly Su
Also filed as: SU LILLY
20 granted patents·69 citations·filing 2011–2024
93Inventor score
Top patents by PatentIndex Score
20 records- 0196US11948999B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·2 cites·20 claims
- 0295US9953875B1Contact resistance control in epitaxial structures of finFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 24, 2018·22 cites·20 claims
- 0393US10170370B2Contact resistance control in epitaxial structures of finFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 1, 2019·10 cites·20 claims
- 0492US10103249B2FinFET device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 16, 2018·7 cites·20 claims
- 0590US9905641B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 27, 2018·5 cites·20 claims
- 0689US8927374B2Semiconductor device and fabrication method thereofSU LILLY·Filed 2011·Granted Jan 6, 2015·10 cites·20 claims
- 0787US8835267B2Semiconductor device and fabrication method thereofLEE YEN-RU·Filed 2011·Granted Sep 16, 2014·9 cites·20 claims
- 0886US12471311B2Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 0985US10854602B2FinFET device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·3 cites·20 claims
- 1074US11257951B2Method of making semiconductor device having first and second epitaxial materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
- 1172US11430878B2Method for fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·0 cites·20 claims
- 1267US10177143B2FinFET device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 8, 2019·1 cites·18 claims
- 1362US10749013B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·0 cites·20 claims
- 1461US10854748B2Semiconductor device having first and second epitaxial materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 1, 2020·0 cites·20 claims
- 1560US9412868B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·0 cites·20 claims
- 1658US9842930B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 12, 2017·0 cites·20 claims
- 1758US9401426B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 26, 2016·0 cites·20 claims
- 1857US9728641B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 8, 2017·0 cites·20 claims
- 1941US9356136B2Engineered source/drain region for n-Type MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 31, 2016·0 cites·19 claims
- 2036US9831343B2Semiconductor device having NFET structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 28, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →