Inventor · disambiguated record
Liang-Wen Wu
Also filed as: WU LIANG · WU LIANG-WEN
21 granted patents·16 pending applications·209 citations·filing 2004–2023
95Inventor score
Top patents by PatentIndex Score
37 records- 0193US7307291B2Gallium-nitride based ultraviolet photo detectorFORMOSA EPITAXY INC·Filed 2005·Granted Dec 11, 2007·24 cites·7 claims
- 0293US7173289B1Light emitting diode structure having photonic crystalsFORMOSA EPITAXY INC·Filed 2005·Granted Feb 6, 2007·44 cites·20 claims
- 0393US7148519B2Structure of GaN light-emitting diodeFORMOSA EPITAXY INC·Filed 2005·Granted Dec 12, 2006·24 cites·9 claims
- 0489US7589350B2Light-emitting diode chipFORMOSA EPITAXY INC·Filed 2006·Granted Sep 15, 2009·17 cites·12 claims
- 0586US7105850B2GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivityFORMOSA EPITAXY INC·Filed 2005·Granted Sep 12, 2006·13 cites·12 claims
- 0684US7049638B2High-brightness gallium-nitride based light emitting diode structureFORMOSA EPITAXY INC·Filed 2005·Granted May 23, 2006·12 cites·8 claims
- 0778US7345321B2High-brightness gallium-nitride based light emitting diode structureFORMOSA EPITAXY INC·Filed 2005·Granted Mar 18, 2008·7 cites·24 claims
- 0874US7473939B2Light-emitting diode structure with transparent window covering layer of multiple filmsFORMOSA EPITAXY INC·Filed 2006·Granted Jan 6, 2009·6 cites·17 claims
- 0969US6979835B1Gallium-nitride based light-emitting diode epitaxial structureFORMOSA EPITAXY INC·Filed 2004·Granted Dec 27, 2005·18 cites·10 claims
- 1068US7042019B1Gallium-nitride based multi-quantum well light-emitting diode n-type contact layer structureFORMOSA EPITAXY INC·Filed 2004·Granted May 9, 2006·12 cites·10 claims
- 1165USD1007738SStrip track lightSELF ELECTRONICS CO LTD·Filed 2021·Granted Dec 12, 2023·3 cites·1 claims
- 1265USD1007034SStrip track lightSELF ELECTRONICS CO LTD·Filed 2021·Granted Dec 5, 2023·3 cites·1 claims
- 1364US7442962B2High-brightness gallium-nitride based light emitting diode structureFORMOSA EPITAXY INC·Filed 2005·Granted Oct 28, 2008·2 cites·24 claims
- 1456US7180096B2Gallium-nitride based light-emitting diode structure with high reverse withstanding voltage and anti-ESD capabilityFORMOSA EPITAXY INC·Filed 2004·Granted Feb 20, 2007·7 cites·4 claims
- 1556US7180097B2High-brightness gallium-nitride based light emitting diode structureFORMOSA EPITAXY INC·Filed 2004·Granted Feb 20, 2007·7 cites·4 claims
- 1655US7087924B2Gallium-nitride based light emitting diode structure with enhanced light illuminanceFORMOSA EPITAXY INC·Filed 2004·Granted Aug 8, 2006·6 cites·6 claims
- 1754US11982439B2Lens and light source moduleSELF ELECTRONICS CO LTD·Filed 2023·Granted May 14, 2024·0 cites·12 claims
- 1850US7042018B2Structure of GaN light-emitting diodeFORMOSA EPITAXY INC·Filed 2004·Granted May 9, 2006·2 cites·9 claims
- 1950US2007267636A1Gallium-Nitride Based Light-Emitting Diode Structure With High Reverse Withstanding Voltage And Anti-ESD CapabilityWU LIANG-WEN·Filed 2007·Application pending·0 cites
- 2049US7692181B2Gallium-nitride based light emitting diode light emitting layer structureFORMOSA EPITAXY INC·Filed 2006·Granted Apr 6, 2010·0 cites·7 claims
- 2148US2006076574A1Gallium-nitride based light-emitting diodes structure with high reverse withstanding voltage and anti-ESD capabilityWU LIANG-WEN·Filed 2005·Application pending·0 cites
- 2247US7087922B2Light-emitting diode structureFORMOSA EPITAXY INC·Filed 2004·Granted Aug 8, 2006·2 cites·10 claims
- 2347US2013248875A1Light-emitting diode comprising stacked-type scattering layer and manufacturing method thereofFORMOSA EPITAXY INC·Filed 2013·Application pending·0 cites
- 2447US2013248901A1Light-emitting diode comprising dielectric material layer and manufacturing method thereofFORMOSA EPITAXY INC·Filed 2013·Application pending·0 cites
- 2544US7763902B2Light emitting diode chipFORMOSA EPITAXY INC·Filed 2006·Granted Jul 27, 2010·0 cites·20 claims
- 2644US2007090372A1Light emitting diodeFORMOSA EPITAXY INC·Filed 2006·Application pending·0 cites
- 2742US2007187697A1Nitride based MQW light emitting diode having carrier supply layerWU LIANG-WEN·Filed 2006·Application pending·0 cites
- 2842US2006054897A1Gallium-nitride based light emitting diode light emitting layer structureYU CHENG-TSANG·Filed 2004·Application pending·0 cites
- 2942US2007090384A1Nitride based semiconductor device having multiple layer buffer structure and fabrication method thereofWU LIANG-WEN·Filed 2005·Application pending·0 cites
- 3042US2008079013A1Light emitting diode structureFORMOSA EPITAXY INC·Filed 2006·Application pending·0 cites
- 3140US2006273333A1Light emitting diode and method of fabricating thereofWU LIANG-WEN·Filed 2005·Application pending·0 cites
- 3239US2007080352A1Light-emitting diode chipWU LIANG-WEN·Filed 2006·Application pending·0 cites
- 3339US2006049418A1Epitaxial structure and fabrication method of nitride semiconductor deviceWEN TZI-CHI·Filed 2004·Application pending·0 cites
- 3439US2006043394A1Gallium-nitride based light emitting diode structureWU LIANG-WEN·Filed 2004·Application pending·0 cites
- 3539US2006049401A1Nitride epitaxial layer structure and method of manufacturing the sameWEN TZU-CHI·Filed 2004·Application pending·0 cites
- 3636US2006076564A1Gallium-nitride based semiconductor device buffer layer structureWU LIANG-WEN·Filed 2004·Application pending·0 cites
- 3735US2007069223A1Light emitting diode element and driving method thereofCHEN MING-SHENG·Filed 2006·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Liang-Wen Wu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →