Inventor · disambiguated record
Linchun Wu
Also filed as: WU LINCHUN
31 granted patents·19 pending applications·40 citations·filing 2019–2025
94Inventor score
Files withYANGTZE MEMORY TECH CO LTD50
Top patents by PatentIndex Score
50 records- 0198US11562945B2Semiconductor device having a spacer structure in a conductive layer and a contact structure in the spacer structureYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 24, 2023·7 cites·20 claims
- 0298US11227871B2Three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 18, 2022·4 cites·20 claims
- 0397US11380629B2Methods for forming three-dimensional memory devices with supporting structure for staircase regionYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 5, 2022·5 cites·20 claims
- 0496US12136586B2Semiconductor devices having a conductive layer stacking with an insulating layer and a spacer structure through the conductive layerYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 5, 2024·2 cites·19 claims
- 0596US12136618B2Three-dimensional memory device with backside source contactYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 5, 2024·2 cites·20 claims
- 0695US11456290B2Three-dimensional memory device with backside source contactYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 27, 2022·3 cites·20 claims
- 0791US11081524B2Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Aug 3, 2021·7 cites·20 claims
- 0889US11716853B2Method for fabricating three-dimensional memory device by thickening an epitaxial layerYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 1, 2023·2 cites·15 claims
- 0988US11626416B2Method for forming three-dimensional memory device with backside source contactYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Apr 11, 2023·2 cites·20 claims
- 1086US10797076B2Methods for forming three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 6, 2020·4 cites·20 claims
- 1182US12058858B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 6, 2024·1 cites·20 claims
- 1282US11393844B2Methods for forming three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 19, 2022·1 cites·20 claims
- 1380US2025029972A1Three-dimensional memory device with backside source contactYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1476US12057372B2Methods for forming contact structures and semiconductor devices including forming a spacer structure into a base structureYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 6, 2024·0 cites·17 claims
- 1575US2025212407A1Three-dimensional memory devices with supporting structure for staircase region and spacer structure for contact structure and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1675US2025344392A1Three-dimensional nand memory and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1772US11751394B2Three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 1872US2025261372A1Semiconductor memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1971US12501616B2Memory system, semiconductor device and fabrication method thereforYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 2069US12283322B2Three-dimensional NAND memory and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Apr 22, 2025·0 cites·23 claims
- 2169US11901313B2Methods for forming three-dimensional memory devices with supporting structure for staircase regionYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 2268US12513906B2Three-dimensional NAND memory device having word line contact with dielectric fillerYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·15 claims
- 2368US12490430B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 2468US12363898B23D NAND memory device with non-uniform channel structure and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 2568US2025201308A1Three-dimensional nand memory and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 2665US12279429B2Three-dimensional memory devices with supporting structure for staircase region and spacer structure for contact structure and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 15, 2025·0 cites·19 claims
- 2764US12396171B2Method of fabricating three-dimensional NAND memoryYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·12 claims
- 2864US2025324594A1Semiconductor structures, memory systems and methods of fabrication of semiconductor structuresYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2963US12419050B2Semiconductor device and its manufacturing method, memory and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Sep 16, 2025·0 cites·19 claims
- 3063US2024422981A1Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3162US12048148B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 23, 2024·0 cites·20 claims
- 3262US2025323089A1Isolation structures in semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3361US2025324593A1Semiconductor structures, memory systems and methods of fabrication of semiconductor structuresYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 3459US2024407167A1Three-dimensional memory device and formation method thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 3558US11574921B2Three-dimensional memory device and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 7, 2023·0 cites·8 claims
- 3657US12432918B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 3757US2023138251A1Three-dimensional memory and fabrication method thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 3856US2023120885A1Three-dimensional memory and forming method thereofYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 3956US2023225124A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 4056US2024355734A1Staircase connection structure for three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 4155US11488977B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Nov 1, 2022·0 cites·20 claims
- 4254US12114498B2Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 8, 2024·0 cites·17 claims
- 4354US11723201B2Method of forming three-dimensional memory device with epitaxially grown layersYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·18 claims
- 4454US11647632B2Three-dimensional memory devices with supporting structure for staircase regionYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted May 9, 2023·0 cites·20 claims
- 4554US2024170393A1Three dimensional (3d) memory device and fabrication methodYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 4653US2024188292A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 4753US2023005944A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 4852US2024074181A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 4951US11233066B2Three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·20 claims
- 5051US2023132530A1Methods of forming semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →