Inventor · disambiguated record
Ling-Yen Yeh
Also filed as: YEH LING-YEN
106 granted patents·10 pending applications·455 citations·filing 1996–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD89TAIWAN SEMICONDUCTOR MFG18WANN CLEMENT HSINGJEN4YU MING-HUA2LIANG MONG S1
Top patents by PatentIndex Score
116 records- 0198US9614086B1Conformal source and drain contacts for multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·27 cites·20 claims
- 0297US10276697B1Negative capacitance FET with improved reliability performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·19 cites·20 claims
- 0397US10269965B1Multi-gate semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·15 cites·20 claims
- 0497US9716146B2Integrated circuit structure and method with solid phase diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 25, 2017·12 cites·20 claims
- 0596US11894446B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
- 0696US10164033B2Conformal source and drain contacts for multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·12 cites·20 claims
- 0796US10164016B2Integrated circuit structure and method with solid phase diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·9 cites·19 claims
- 0896US9620627B1Field-effect transistors having black phosphorus channel and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·11 cites·20 claims
- 0996US9553025B2Selective Fin-shaping processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·14 cites·20 claims
- 1096US9214556B2Self-aligned dual-metal silicide and germanide formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·23 cites·20 claims
- 1195US9337285B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 10, 2016·9 cites·20 claims
- 1295US8946829B2Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applicationsWANN CLEMENT HSINGJEN·Filed 2011·Granted Feb 3, 2015·17 cites·12 claims
- 1395US7781799B2Source/drain strained layersTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 24, 2010·26 cites·12 claims
- 1494US12021153B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·1 cites·20 claims
- 1594US9711607B1One-dimensional nanostructure growth on graphene and devices thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·9 cites·20 claims
- 1693US11545582B2Method for forming gate-all-around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·2 cites·20 claims
- 1793US10937783B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 2, 2021·6 cites·20 claims
- 1893US9576950B1Contacts to transition metal dichalcogenide and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·9 cites·20 claims
- 1993US9136383B2Contact structure of semiconductor deviceWANN CLEMENT HSINGJEN·Filed 2012·Granted Sep 15, 2015·13 cites·20 claims
- 2093US2025359118A1Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2192US10283590B2Field-effect transistors having contacts to 2D material active regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 7, 2019·7 cites·16 claims
- 2291US10269791B2Field-effect transistors having transition metal dichalcogenide channels and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·5 cites·20 claims
- 2391US9768313B2Devices having transition metal dichalcogenide layers with different thicknesses and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 19, 2017·7 cites·21 claims
- 2491US7579248B2Resolving pattern-loading issues of SiGe stressorTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 25, 2009·22 cites·23 claims
- 2590US10879394B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·5 cites·20 claims
- 2690US10741646B2Field-effect transistors having contacts to 2D material active regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 11, 2020·4 cites·20 claims
- 2790US10515857B2Method for manufacturing semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·4 cites·20 claims
- 2890US9455325B2Fin field-effect transistors having controlled fin heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 27, 2016·6 cites·20 claims
- 2990US8963257B2Fin field effect transistors and methods for fabricating the sameWANN CLEMENT HSINGJEN·Filed 2011·Granted Feb 24, 2015·8 cites·20 claims
- 3089US10741678B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 11, 2020·4 cites·20 claims
- 3189US10535573B2System and method for test key characterizing wafer processing stateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 14, 2020·4 cites·20 claims
- 3289US10490631B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·3 cites·20 claims
- 3389US10056498B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·4 cites·20 claims
- 3489US10032889B2Self-aligned passivation of active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 24, 2018·4 cites·20 claims
- 3589US9530710B2Passivation structure of fin field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 27, 2016·5 cites·20 claims
- 3689US2025311279A1Multi-gate semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3788US10868132B2Semiconductor device including standard cells with header/footer switch including negative capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 15, 2020·4 cites·20 claims
- 3887US12432956B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 3987US12376345B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 4087US11728332B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·1 cites·20 claims
- 4187US10825899B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·2 cites·20 claims
- 4287US10516061B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·3 cites·20 claims
- 4387US9041158B2Method of forming fin field-effect transistors having controlled fin heightWANN CLEMENT HSINGJEN·Filed 2012·Granted May 26, 2015·8 cites·20 claims
- 4486US10872955B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·2 cites·20 claims
- 4586US9093335B2Calculating carrier concentrations in semiconductor Fins using probed resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 28, 2015·5 cites·20 claims
- 4686US9048317B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·6 cites·20 claims
- 4785US12218203B2Integrated circuit structure and method with solid phase diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 4885US11302695B2Method for forming integrated semiconductor device with 2D material layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·1 cites·20 claims
- 4985US11107919B2Method of manufacturing semiconductor device including ferroelectric layer having columnar-shaped crystalsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 31, 2021·3 cites·20 claims
- 5085US10825933B2Gate-all-around structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 3, 2020·2 cites·20 claims
Showing the top 50 of 116 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →